@misc{alok_arnold_2004, title={Passivated silicon carbide devices with low leakage current and method of fabricating}, volume={6,703,276}, number={2004 Mar. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D. and Arnold, E.}, year={2004} }
 @misc{alok_2004, title={Silicon carbide schottky barrier diode and method of making}, volume={6,797,586}, number={2004 Sep. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D.}, year={2004} }
 @misc{alok_arnold_egloff_mukherjee_2003, title={Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor}, volume={6,559,068}, number={2003 May 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D. and Arnold, E. and Egloff, R. and Mukherjee, S.}, year={2003} }
 @misc{alok_jos_2003, title={Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same}, volume={6,620,697}, number={2003 Sep. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D. and Jos, R.}, year={2003} }
 @misc{alok_2003, title={Superior silicon carbide integrated circuits and method of fabricating}, volume={6,504,184}, number={2003 Jan. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D.}, year={2003} }
 @misc{alok_2002, title={Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices}, volume={6,407,014}, number={2002 Mar. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D.}, year={2002} }
 @misc{alok_arnold_2002, title={Passivated silicon carbide devices with low leakage current and method of fabricating}, volume={6,373,076}, number={2002 Apr. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D. and Arnold, E.}, year={2002} }
 @misc{alok_2002, title={Silicon carbide LMOSFET with gate reach-through protection}, volume={6,355,944}, number={2002 Mar. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D.}, year={2002} }
 @misc{alok_2001, title={Self-aligned silicon carbide LMOSFET}, volume={6,323,506}, number={2001 Nov. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D.}, year={2001} }
 @misc{alok_2001, title={Superior silicon carbide integrated circuits and method of fabricating}, volume={6,303,508}, number={2001 Oct. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D.}, year={2001} }
 @misc{alok_mukherjee_arnold_2000, title={Lateral silicon carbide semiconductor device having a drift region with a varying doping level}, volume={6,011,278}, number={2000 Jan. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D. and Mukherjee, S. and Arnold, E.}, year={2000} }
 @misc{alok_taskar_letavic_2000, title={Method of forming a laterally-varying charge profile in silicon carbide substrate}, volume={6,096,663}, number={2000 Aug. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Alok, D. and Taskar, N. and Letavic, T.}, year={2000} }
 @article{alok_baliga_1997, title={Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation}, volume={144}, ISSN={["0013-4651"]}, DOI={10.1149/1.1837545}, abstractNote={The kinetics of a thermal oxidation scheme with enhanced growth rate for 6H-SiC is reported in this paper. This scheme is based upon the formation of a thick amorphous layer created using high-dose ion implantation followed by thermal oxidation. The oxide thickness has been demonstrated to be larger in the amorphized region, when compared to the unimplanted (monocrystalline SiC) region, after dry oxidation. The oxide growth rate was parabolic in nature in the amorphized region, in contrast to a mixed linear-parabolic growth rate observed for the monocrystalline region.}, number={3}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Alok, D and Baliga, BJ}, year={1997}, month={Mar}, pages={1135–1137} }
 @misc{baliga_alok_1997, title={Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices}, volume={5,635,412}, number={1997 June 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Baliga, B. J. and Alok, D.}, year={1997}, month={Jun} }
 @article{alok_baliga_1997, title={SiC device edge termination using finite area argon implantation}, volume={44}, ISSN={["0018-9383"]}, DOI={10.1109/16.585559}, abstractNote={In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported. It is demonstrated that only 50 /spl mu/m of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages. The leakage current at small reverse bias voltages was found to be directly proportional to the implant area.}, number={6}, journal={IEEE TRANSACTIONS ON ELECTRON DEVICES}, author={Alok, D and Baliga, BJ}, year={1997}, month={Jun}, pages={1013–1017} }
 @misc{baliga_alok_bhatnagar, title={Method for forming a p-n junction in silicon carbide}, volume={5,318,915}, number={1994 Jun. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Baliga, B. J and Alok, D. and Bhatnagar, M.} }
 @misc{baliga_alok, title={Method of forming trenches in monocrystalline silicon carbide}, volume={5,436,174}, number={1995 Jul. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Baliga, B. J. and Alok, D.} }
 @misc{baliga_alok, title={Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices}, volume={5,449,925}, number={1995 Sep. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Baliga, B. J. and Alok, D.} }