Dev Alok

Alok, D., & Arnold, E. (2004). Passivated silicon carbide devices with low leakage current and method of fabricating. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2004). Silicon carbide schottky barrier diode and method of making. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., Arnold, E., Egloff, R., & Mukherjee, S. (2003). Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., & Jos, R. (2003). Silicon carbide lateral metal-oxide semiconductor field-effect transistor having a self-aligned drift region and method for forming the same. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2003). Superior silicon carbide integrated circuits and method of fabricating. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2002). Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., & Arnold, E. (2002). Passivated silicon carbide devices with low leakage current and method of fabricating. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2002). Silicon carbide LMOSFET with gate reach-through protection. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2001). Self-aligned silicon carbide LMOSFET. Washington, DC: U.S. Patent and Trademark Office.

Alok, D. (2001). Superior silicon carbide integrated circuits and method of fabricating. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., Mukherjee, S., & Arnold, E. (2000). Lateral silicon carbide semiconductor device having a drift region with a varying doping level. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., Taskar, N., & Letavic, T. (2000). Method of forming a laterally-varying charge profile in silicon carbide substrate. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., & Baliga, B. J. (1997). Kinetics of enhanced thermal oxidation of silicon carbide using amorphization by ion implantation. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(3), 1135–1137. https://doi.org/10.1149/1.1837545

Baliga, B. J., & Alok, D. (1997). Methods of fabricating voltage breakdown resistant monocrystalline silicon carbide semiconductor devices. Washington, DC: U.S. Patent and Trademark Office.

Alok, D., & Baliga, B. J. (1997). SiC device edge termination using finite area argon implantation. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(6), 1013–1017. https://doi.org/10.1109/16.585559

Baliga, B. J., Alok, D., & Bhatnagar, M. Method for forming a p-n junction in silicon carbide. Washington, DC: U.S. Patent and Trademark Office.

Baliga, B. J., & Alok, D. Method of forming trenches in monocrystalline silicon carbide. Washington, DC: U.S. Patent and Trademark Office.

Baliga, B. J., & Alok, D. Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices. Washington, DC: U.S. Patent and Trademark Office.