Works (5)
1999 article
Bias Dependent Contrast Mechanisms in EBIC Images of MOS Capacitors
Kirk, H. R., Radzimski, Z., Romanowski, A., & Rozgonyi, G. A. (1999, April 1). Journal of The Electrochemical Society.
1999 article
Oxide Precipitate‐Induced Dislocation Generation in Heavily Boron‐Doped Czochralski Silicon
Ono, T., Romanowski, A., Asayama, E., Horie, H., Sueoka, K., Tsuya, H., & Rozgonyi, G. A. (1999, September 1). Journal of The Electrochemical Society.
1999 article
Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers
Romanowski, A., Rozgonyi, G., & Tamatsuka, M. (1999, May 1). Journal of Applied Physics.
1998 article
Frequency-resolved microwave reflection photoconductance
Romanowski, A., Buczkowski, A., Karoui, A., & Rozgonyi, G. A. (1998, June 15). Journal of Applied Physics.
1997 article
Metallic Impurity Gettering and Secondary Defect Formation in Megaelectron Volt Self‐Implanted Czochralski and Float‐Zone Silicon
Brown, R. A., Kononchuk, O., Bondarenko, I., Romanowski, A., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997, August 1). Journal of The Electrochemical Society.