Andrzej Romanowski

Kirk, H. R., Radzimski, Z., Romanowski, A., & Rozgonyi, G. A. (1999). Bias dependent contrast mechanisms in EBIC images of MOS capacitors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(4), 1529–1535. https://doi.org/10.1149/1.1391799

Ono, T., Romanowski, A., Asayama, E., Horie, H., Sueoka, K., Tsuya, H., & Rozgonyi, G. A. (1999). Oxide precipitate-induced dislocation generation in heavily boron-doped Czochralski silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3461–3465. https://doi.org/10.1149/1.1392496

Romanowski, A., Rozgonyi, G., & Tamatsuka, M. (1999). Simulation of void and oxygen precipitation processes during high temperature annealing of silicon wafers. JOURNAL OF APPLIED PHYSICS, 85(9), 6408–6414. https://doi.org/10.1063/1.370144

Romanowski, A., Buczkowski, A., Karoui, A., & Rozgonyi, G. A. (1998). Frequency-resolved microwave reflection photoconductance. JOURNAL OF APPLIED PHYSICS, 83(12), 7730–7735. https://doi.org/10.1063/1.367946

Brown, R. A., Kononchuk, O., Bondarenko, I., Romanowski, A., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997). Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881. https://doi.org/10.1149/1.1837910