@article{johnson_fujita_rowland_bowers_hughes_he_masry_cook_schetzina_ren_et al._1997, title={MBE growth and properties of GaN on GaN/SiC substrates}, DOI={10.1016/S0038-1101(96)00169-4}, abstractNote={Abstract Growth of III–V nitrides by molecular beam epitaxy (MBE) is being studied at NCSU using an r.f. nitrogen plasma source. GaN SiC substrates consisting of ∼ 3 μm thick GaN buffer layers grown on 6HSiC wafers by MOVPE at Cree Research Inc. are being used as substrates in the MBE film growth experiments. The MBE-grown GaN films exhibit excellent structural and optical properties—comparable to the best GaN films grown by MOVPE—as determined from photoluminescence, X-ray diffraction, and vertical-cross-section TEM micrographs. Mg and Si have been used as dopants for p -type and n -type layers, respectively. Al x Ga 1 − x N films ( x ∼ 0.06-0.08) and Al x Ga 1 − x N GaN multi-quantum-well structures have been grown which display good optical properties. Light-emitting diodes based on double-heterostructures of Al x Ga 1 − x N GaN which emit violet light at ∼400 nm have also been demonstrated. Growth of GaN on LiGaO 2 substrates is also reported for comparison.}, number={2}, journal={Solid-State Electronics}, author={Johnson, M.A.L. and Fujita, Shizuo and Rowland, W.H. and Bowers, K.A. and Hughes, W.C. and He, Y.W. and Masry, N.A. El and Cook, J.W. and Schetzina, J.F. and Ren, J. and et al.}, year={1997}, month={Feb} }