2000 journal article

Design and integration considerations for end-of-the roadmap ultrashallow junctions

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(1), 338–345.

By: C. Osburn, I. De, K. Yee & A. Srivastava

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Impact of gate workfunction on device performance at the 50 nm technology node

Solid-State Electronics, 44(6), 1077–1080.

By: I. De, D. Johri, A. Srivastava & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Influence of BJT transit frequency limit relation to MOSFET parameters on the switching speed of BiCMOS digital circuits

VLSI Design (Yverdon, Switzerland), 9(2), 203–211.

By: A. Srivastava

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 ?m PMOSFETs

Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 163–170.

By: A. Srivastava, H. Heinisch, E. Vogel, C. Parker, C. Osburn, N. Masnari, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

Journal of the Electrochemical Society, 145(6), 2131–2137.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Predicting the electrorheological behavior of milk chocolate

Journal of Food Process Engineering, 21(3), 249–261.

By: C. Daubert, J. Steffe & A. Srivastava

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

A comparative study of N+/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors

Journal of the Electrochemical Society, 144(10), 3659–3664.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFET's

IEEE Transactions on Electron Devices, 44(9), 1491–1498.

Source: NC State University Libraries
Added: August 6, 2018

1996 conference paper

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

Rapid thermal and integrated processing V: Symposium held April 8-12, 1996, San Francisco, California, U.S.A. (Materials Research Society symposium; 429), 343–347.

Source: NC State University Libraries
Added: August 6, 2018