Works (11)
Updated: July 5th, 2023 16:04
2000 article
Design and integration considerations for end-of-the roadmap ultrashallow junctions
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 338–345.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
2000 journal article
Impact of gate workfunction on device performance at the 50 nm technology node
SOLID-STATE ELECTRONICS, 44(6), 1077–1080.
author keywords: gate workfunction; super steep retrograde; channel engineering
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1999 journal article
Influence of BJT transit frequency limit relation to MOSFET parameters on the switching speed of BiCMOS digital circuits
VLSI Design (Yverdon, Switzerland), 9(2), 203–211.
Source: NC State University Libraries
Added: August 6, 2018
1998 article
Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs
RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(6), 2131–2137.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Predicting the electrorheological behavior of milk chocolate
Journal of Food Process Engineering, 21(3), 249–261.
UN Sustainable Development Goal Categories
11. Sustainable Cities and Communities
(Web of Science)
Source: NC State University Libraries
Added: August 6, 2018
1997 conference paper
A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy
ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.
Source: NC State University Libraries
Added: August 6, 2018
1997 journal article
A comparative study of n(+)/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(10), 3659–3664.
Source: Web Of Science
Added: August 6, 2018
1997 conference paper
Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology
ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.
Source: NC State University Libraries
Added: August 6, 2018
1997 journal article
The effect of the elevated source drain doping profile on performance and reliability of deep submicron MOSFET's
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1491–1498.
Source: Web Of Science
Added: August 6, 2018
1996 article
Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition
RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.
Source: Web Of Science
Added: August 6, 2018
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