Anadi Srivastava

Design and integration considerations for end-of-the roadmap ultrashallow junctions

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 18, pp. 338–345.

Impact of gate workfunction on device performance at the 50 nm technology node

SOLID-STATE ELECTRONICS, 44(6), 1077–1080.

Influence of BJT transit frequency limit relation to MOSFET parameters on the switching speed of BiCMOS digital circuits

VLSI Design (Yverdon, Switzerland), 9(2), 203–211.

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs

RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170.

Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(6), 2131–2137.

Predicting the electrorheological behavior of milk chocolate

Journal of Food Process Engineering, 21(3), 249–261.

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

A comparative study of n(+)/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(10), 3659–3664.

Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.

The effect of the elevated source drain doping profile on performance and reliability of deep submicron MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1491–1498.

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.