Works (11)
2000 article
Design and integration considerations for end-of-the roadmap ultrashallow junctions
Osburn, C. M., De, I., Yee, K. F., & Srivastava, A. (2000, January 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.
2000 article
Impact of gate workfunction on device performance at the 50 nm technology node
De, I., Johri, D., Srivastava, A., & Osburn, C. M. (2000, June 1). Solid-State Electronics.
1999 journal article
Influence of BJT transit frequency limit relation to MOSFET parameters on the switching speed of BiCMOS digital circuits
VLSI Design (Yverdon, Switzerland), 9(2), 203–211.
1998 article
Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs
Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., … Hauser, J. R. (1998, January 1). MRS Proceedings.
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1998 article
PREDICTING THE ELECTRORHEOLOGICAL BEHAVIOR OF MILK CHOCOLATE
DAUBERT, C. R., STEFFE, J. F., & SRIVASTAVA, A. K. (1998, August 1). Journal of Food Process Engineering.
1998 article
Parasitic Resistance Considerations of Using Elevated Source/Drain Technology for Deep Submicron Metal Oxide Semiconductor Field Effect Transistors
Sun, J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., Masnari, N. A., & Westhoff, R. (1998, June 1). Journal of The Electrochemical Society.
1997 conference paper
A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy
ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.
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1997 article
A Comparative Study of n+/p Junction Formation for Deep Submicron Elevated Source/Drain Metal Oxide Semiconductor Field Effect Transistors
Sun, J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., Masnari, N. A., & Westhoff, R. (1997, October 1). Journal of The Electrochemical Society.
1997 conference paper
Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology
ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.
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1997 article
The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFETs
Sun, J. J., Bartholomew, R. F., Bellur, K., Srivastava, A., Osburn, C. M., & Masnari, N. A. (1997, January 1). IEEE Transactions on Electron Devices.
1996 article
Sub-Half Micron Elevated SourceDrain NMOSFETS by Low Temperature Selective Epitaxial Deposition
Sun, J., Bartholomew, R. F., Bellur, K., O'Neil, P. A., Srivastava, A., Violette, K. E., … Masnari, N. A. (1996, January 1). MRS Proceedings.
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