Nkadi Sukidi

Orientation mediated self-assembled gallium phosphide islands grown on silicon

Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. (2000, March 1). Philosophical Magazine. A/Philosophical Magazine. A. Physics of Condensed Matter. Structure, Defects and Mechanical Properties.

Initial Stages of Heteroepitaxy of GaP on Selected Silicon Surfaces

Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. (1999, March 1). Journal of The Electrochemical Society.

Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). Thin Solid Films.

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Narayanan, V., Sukidi, N., Hu, C., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 1). Materials Science and Engineering B.

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

Bachmann, K. J., Sukidi, N., Höpfner, C., Harris, C., Dietz, N., Tran, H. T., … Banks, H. T. (1998, January 1). Journal of Crystal Growth, Vol. 183, pp. 323–337.

Molecular layer epitaxy by real-time optical process monitoring

Bachmann, K. J., Höpfner, C., Sukidi, N., Miller, A. E., Harris, C., Aspnes, D. E., … Rossow, U. (1997, March 1). Applied Surface Science, Vol. 112, pp. 38–47.

Real-time monitoring of surface processes by p-polarized reflectance

Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.