Works (7)

2000 journal article

Orientation mediated self-assembled gallium phosphide islands grown on silicon

Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 80(3), 555–572.

By: V. Narayanan, S. Mahajan, N. Sukidi, K. Bachmann, V. Woods & N. Dietz

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Initial stages of heteroepitaxy of GaP on selected silicon surfaces

Journal of the Electrochemical Society, 146(3), 1147–1150.

By: N. Sukidi, K. Bachmann, V. Narayanan & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

Thin Solid Films, 357(1), 53–56.

By: V. Narayanan, N. Sukidi, K. Bachmann & S. Mahajan

Source: NC State University Libraries
Added: August 6, 2018

1998 personal communication

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

By: V. Narayanan, N. Sukidi, C. Hu, N. Dietz, K. Bachmann, S. Mahajan, S. Shingubara

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

Journal of Crystal Growth, 183(3), 323–337.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

By: K. Bachmann, C. Hopfner, N. Sukidi, A. Miller, C. Harris, D. Aspnes, N. Dietz, H. Tran ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Real-time monitoring of surface processes by p-polarized reflectance

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 807–815.

By: N. Dietz, N. Sukidi, C. Harris & K. Bachmann

Source: NC State University Libraries
Added: August 6, 2018