Nkadi Sukidi

Works (7)

Updated: March 10th, 2025 12:14

2000 journal article

Orientation mediated self-assembled gallium phosphide islands grown on silicon

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572.

By: V. Narayanan *, S. Mahajan *, N. Sukidi n, K. Bachmann n, V. Woods n & N. Dietz n

topics (OpenAlex): Semiconductor Quantum Structures and Devices; Semiconductor materials and interfaces; Nanowire Synthesis and Applications
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7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Initial stages of heteroepitaxy of GaP on selected silicon surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1147–1150.

By: N. Sukidi n, K. Bachmann n, V. Narayanan * & S. Mahajan *

topics (OpenAlex): Semiconductor Quantum Structures and Devices; Semiconductor materials and devices; GaN-based semiconductor devices and materials
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14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)

Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). THIN SOLID FILMS, Vol. 357, pp. 53–56.

By: V. Narayanan *, N. Sukidi n, K. Bachmann n & S. Mahajan *

author keywords: GaP islands; Si substrates; defects; high resolution transmission electron microscopy
topics (OpenAlex): Semiconductor Quantum Structures and Devices; Semiconductor materials and devices; Semiconductor materials and interfaces
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14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1998 personal communication

Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26).

By: V. Narayanan *, N. Sukidi n, C. Hu*, N. Dietz n, K. Bachmann n, S. Mahajan *, S. Shingubara *

author keywords: gallium phosphide; chemical beam epitaxy; oxide patterned silicon substrates
topics (OpenAlex): Semiconductor materials and devices; Semiconductor Quantum Structures and Devices; GaN-based semiconductor devices and materials
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Source: Web Of Science
Added: August 6, 2018

1998 journal article

Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance

JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337.

By: K. Bachmann n, N. Sukidi n, C. Hopfner n, C. Harris n, N. Dietz n, H. Tran n , S. Beeler n, K. Ito n, H. Banks n

author keywords: p-polarized reflectance; surface kinetics; chemical beam epitaxy; real-time process monitoring
topics (OpenAlex): Advanced Chemical Physics Studies; Spectroscopy and Quantum Chemical Studies; Photochemistry and Electron Transfer Studies
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 journal article

Molecular layer epitaxy by real-time optical process monitoring

Applied Surface Science, 112(1997 Mar.), 38–47.

By: K. Bachmann n, C. Hopfner n, N. Sukidi n, A. Miller n, C. Harris n, D. Aspnes n , N. Dietz n, H. Tran n  ...

topics (OpenAlex): Semiconductor Quantum Structures and Devices; Semiconductor materials and devices; Force Microscopy Techniques and Applications
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Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1997 article

Real-time monitoring of surface processes by p-polarized reflectance

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815.

By: N. Dietz n, N. Sukidi n, C. Harris n & K. Bachmann n

topics (OpenAlex): Semiconductor Quantum Structures and Devices; Semiconductor Lasers and Optical Devices; GaN-based semiconductor devices and materials
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UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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