2000 journal article
Orientation mediated self-assembled gallium phosphide islands grown on silicon
Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties, 80(3), 555–572.
By: V. Narayanan, S. Mahajan, N. Sukidi, K. Bachmann, V. Woods & N. Dietz
1999 journal article
Initial stages of heteroepitaxy of GaP on selected silicon surfaces
Journal of the Electrochemical Society, 146(3), 1147–1150.
By: N. Sukidi, K. Bachmann, V. Narayanan & S. Mahajan
Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)
Thin Solid Films, 357(1), 53–56.
By: V. Narayanan*, N. Sukidi, K. Bachmann & S. Mahajan*
1998 personal communication
Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates
By: V. Narayanan*, N. Sukidi, C. Hu*, N. Dietz, K. Bachmann, S. Mahajan*, S. Shingubara*
1998 journal article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
Journal of Crystal Growth, 183(3), 323–337.
By: K. Bachmann, N. Sukidi, C. Hopfner, C. Harris, N. Dietz, H. Tran, S. Beeler, K. Ito, H. Banks
1997 journal article
Molecular layer epitaxy by real-time optical process monitoring
Applied Surface Science, 112(1997 Mar.), 38–47.
By: K. Bachmann, C. Hopfner, N. Sukidi, A. Miller, C. Harris, D. Aspnes, N. Dietz, H. Tran ...and 3 other authors, including 2 NC State authors, S. Beeler, K. Ito & H. Banks n
Real-time monitoring of surface processes by p-polarized reflectance
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 15(3 pt.1), 807–815.
By: N. Dietz, N. Sukidi, C. Harris & K. Bachmann
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