Works (7)
2000 journal article
Orientation mediated self-assembled gallium phosphide islands grown on silicon
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572.
1999 journal article
Initial stages of heteroepitaxy of GaP on selected silicon surfaces
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1147–1150.
1999 article
Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)
Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). THIN SOLID FILMS, Vol. 357, pp. 53–56.
1998 personal communication
Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates
Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26).
1998 journal article
Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance
JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337.
1997 journal article
Molecular layer epitaxy by real-time optical process monitoring
Applied Surface Science, 112(1997 Mar.), 38–47.
1997 article
Real-time monitoring of surface processes by p-polarized reflectance
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815.