Nkadi Sukidi

Narayanan, V., Mahajan, S., Sukidi, N., Bachmann, K. J., Woods, V., & Dietz, N. (2000). Orientation mediated self-assembled gallium phosphide islands grown on silicon. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 80(3), 555–572. https://doi.org/10.1080/01418610008212068

Sukidi, N., Bachmann, K. J., Narayanan, V., & Mahajan, S. (1999). Initial stages of heteroepitaxy of GaP on selected silicon surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1147–1150. https://doi.org/10.1149/1.1391736

Narayanan, V., Sukidi, N., Bachmann, K. J., & Mahajan, S. (1999, December 1). Origins of defects in self assembled GaP islands grown on Si(001) and Si(111). THIN SOLID FILMS, Vol. 357, pp. 53–56. https://doi.org/10.1016/S0040-6090(99)00474-5

Narayanan, V., Sukidi, N., Hu, C. M., Dietz, N., Bachmann, K. J., Mahajan, S., & Shingubara, S. (1998, June 26). Growth of gallium phosphide layers by chemical beam epitaxy on oxide patterned (001)silicon substrates. https://doi.org/10.1016/s0921-5107(98)00169-x

Bachmann, K. J., Sukidi, N., Hopfner, C., Harris, C., Dietz, N., Tran, H. T., … Banks, H. T. (1998). Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance. JOURNAL OF CRYSTAL GROWTH, 183(3), 323–337. https://doi.org/10.1016/s0022-0248(97)00410-7

Bachmann, K. J., Hopfner, C., Sukidi, N., Miller, A. E., Harris, C. J., Aspnes, D. E., … Banks, H. T. (1997). Molecular layer epitaxy by real-time optical process monitoring. Applied Surface Science, 112(1997 Mar.), 38–47. https://doi.org/10.1016/S0169-4332(96)00975-0

Dietz, N., Sukidi, N., Harris, C., & Bachmann, K. J. (1997). Real-time monitoring of surface processes by p-polarized reflectance. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 807–815. https://doi.org/10.1116/1.580712