1998 journal article

Elevated n(+)/p junctions by implant into CoSi2 formed on selective epitaxy for deep submicron MOSFET's

IEEE Transactions on Electron Devices, 45(9), 1946–1952.

By: J. Sun, J. Tsai & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Impact of epi facets on deep submicron elevated source/drain MOSFET characteristics

IEEE Transactions on Electron Devices, 45(6), 1377–1380.

By: J. Sun & C. Osburn

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

Journal of the Electrochemical Society, 145(6), 2131–2137.

By: J. Sun, R. Bartholomew, K. Bellur, A. Srivastava, C. Osburn, N. Masnari, R. Westhoff

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

A comparative study of N+/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors

Journal of the Electrochemical Society, 144(10), 3659–3664.

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The effect of the elevated source/drain doping profile on performance and reliability of deep submicron MOSFET's

IEEE Transactions on Electron Devices, 44(9), 1491–1498.

Source: NC State University Libraries
Added: August 6, 2018

1996 conference paper

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

Rapid thermal and integrated processing V: Symposium held April 8-12, 1996, San Francisco, California, U.S.A. (Materials Research Society symposium; 429), 343–347.

Source: NC State University Libraries
Added: August 6, 2018