Works (8)

Updated: July 5th, 2023 16:04

1998 journal article

Elevated n(+)/p junctions by implant into CoSi2 formed on selective epitaxy for deep submicron MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(9), 1946–1952.

By: J. Sun n, J. Tsai n & C. Osburn n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: elevated source/drain; selective epitaxy; shallow junctions; silicide
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Impact of epi facets on deep submicron elevated source/drain MOSFET characteristics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1377–1380.

By: J. Sun n & C. Osburn n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
author keywords: elevated source/drain; epi facet; MOSFET
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Parasitic resistance considerations of using elevated source/drain technology for deep submicron metal oxide semiconductor field effect transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(6), 2131–2137.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n, N. Masnari n, R. Westhoff n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

1997 conference paper

A 0.18 ?m CMOS technology for elevated source/drain MOSFETs using selective silicon epitaxy

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 571–585. Pennington, NJ: Electrochemical Society.

By: A. Srivastava, J. Sun, K. Bellur, R. Bartholomew, P. O'Neil, S. Celik, C. Osburn, N. Masnari ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

A comparative study of n(+)/p junction formation for deep submicron elevated source/drain metal oxide semiconductor field effect transistors

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(10), 3659–3664.

By: J. Sun n, R. Bartholomew n, K. Bellur n, A. Srivastava n, C. Osburn n, N. Masnari n, R. Westhoff n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

1997 conference paper

Parasitic resistance considerations of using elevated source/drain for deep submicron MOSFET technology

ULSI science and technology/1997: Proceedings of the Sixth International Symposium on UltraLarge Scale Integration Science and Technology (Proceedings (Electrochemical Society); v. 97-3), 587–597. Pennington, NJ: Electrochemical Society.

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The effect of the elevated source drain doping profile on performance and reliability of deep submicron MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1491–1498.

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018

1996 article

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.

By: J. Sun n, R. Bartholomew n, K. Bellur n, P. ONeil n, A. Srivastava n, K. Violette n, M. Ozturk, C. Osburn n, N. Masnari n

co-author countries: United States of America πŸ‡ΊπŸ‡Έ
Source: Web Of Science
Added: August 6, 2018