David Venables

A Low‐Thermal‐Budget In Situ Doped Multilayer Silicon Epitaxy Process for MOSFET Channel Engineering

Ban, I., Öztürk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. (1999, March 1). Journal of The Electrochemical Society, Vol. 146, pp. 1189–1196.

Characterization and production metrology of thin transistor gate oxide films

Diebold, A. C., Venables, D., Chabal, Y., Muller, D., Weldon, M., & Garfunkel, E. (1999, July 1). Materials Science in Semiconductor Processing.

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, J. R., Wortman, J. J., Venables, R. D., … Venables, D. (1999, April 1). IEEE Electron Device Letters.

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: I. Role of Implanted  BF 2

O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., Xu, M., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.

Growth of Selective Silicon Epitaxy Using Disilane and Chlorine on Heavily Implanted Substrates: II. Role of Implanted Arsenic

O'Neil, P. A., Öztürk, M. C., Batchelor, A. D., Venables, D., & Maher, D. M. (1999, August 1). Journal of The Electrochemical Society.

Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

Neogi, S. S., Venables, D., Na, Z., & Maher, D. M. (1998, January 1). Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena.

Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 362–366.

Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si

Krishnamoorthy, V., Moller, K., Jones, K. S., Venables, D., Jackson, J., & Rubin, L. (1998, December 1). Journal of Applied Physics.

Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

Neogi, S. S., Venables, D., Ma, Z., Maher, D. M., Taylor, M., & Corcoran, S. (1997, December 1). Journal of Applied Physics.

The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

Jones, K. S., Chen, J., Bharatan, S., Jackson, J., Rubin, L., Puga-Lambers, M., & Venables, D. (1997, November 1). Journal of Electronic Materials.