1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.

By: I. Ban*, M. Ozturk*, V. Misra*, J. Wortman*, D. Venables n & D. Maher n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 review

Characterization and production metrology of thin transistor gate oxide films

[Review of ]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2(2), 103–147.

By: A. Diebold, D. Venables n, Y. Chabal, D. Muller, M. Weldon & E. Garfunkel*

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181.

By: W. Henson n, K. Ahmed*, E. Vogel*, . Hauser n, J. Wortman n, R. Venables n, M. Xu n, D. Venables n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3070–3078.

By: . PA O'Neil, M. Ozturk*, A. Batchelor n, D. Venables n, M. Xu n & D. Maher n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(8), 3079–3086.

By: . PA O'Neil, M. Ozturk*, A. Batchelor n, D. Venables n & D. Maher n

Source: Web Of Science
Added: August 6, 2018

1998 article

Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 471–475.

By: S. Neogi, D. Venables, Z. Na & D. Maher

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 362–366.

By: D. Venables, H. Jain & D. Collins

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si

JOURNAL OF APPLIED PHYSICS, 84(11), 5997–6002.

By: V. Krishnamoorthy*, K. Moller*, K. Jones*, D. Venables n, J. Jackson* & L. Rubin*

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique

JOURNAL OF APPLIED PHYSICS, 82(11), 5811–5815.

By: S. Neogi*, D. Venables n, Z. Ma*, D. Maher n, M. Taylor* & S. Corcoran*

UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

1997 article

The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

Jones, K. S., Chen, J., Bharatan, S., Jackson, J., Rubin, L., PugaLambers, M., & Venables, D. (1997, November). JOURNAL OF ELECTRONIC MATERIALS, Vol. 26, pp. 1361–1364.

By: K. Jones*, J. Chen*, S. Bharatan*, J. Jackson*, L. Rubin*, M. PugaLambers*, D. Venables n

author keywords: amorphization; dose rate; implant temperature; ion implantation
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (Web of Science; OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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