1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

Journal of the Electrochemical Society, 146(3), 1189–1196.

By: I. Ban, M. Ozturk, V. Misra, J. Wortman, D. Venables & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Characterization and production metrology of thin transistor gate oxide films

Materials Science in Semiconductor Processing, 2(2), 103–147.

By: A. Diebold, D. Venables, Y. Chabal, D. Muller, M. Weldon & E. Garfunkel

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

IEEE Electron Device Letters, 20(4), 179–181.

By: W. Henson, K. Ahmed, E. Vogel, J. Hauser, J. Wortman, R. Venables, M. Xu, D. Venables

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2

Journal of the Electrochemical Society, 146(8), 3070–3078.

By: P. O'Neil, M. Ozturk, A. Batchelor, D. Venables, M. Xu & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic

Journal of the Electrochemical Society, 146(8), 3079–3086.

By: P. O'Neil, M. Ozturk, A. Batchelor, D. Venables & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 471–475.

By: S. Neogi, D. Venables, Z. Na & D. Maher

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(1), 362–366.

By: D. Venables, H. Jain & D. Collins

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si

Journal of Applied Physics, 84(11), 5997–6002.

By: V. Krishnamoorthy, K. Moller, K. Jones, D. Venables, J. Jackson & L. Rubin

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Mapping two dimensional arsenic distributions in silicon using dopant selective chemical etching technique

Journal of Applied Physics, 82(11), 5811–5815.

By: S. Neogi, D. Venables, Z. Ma, D. Maher, M. Taylor & S. Corcoran

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

Journal of Electronic Materials, 26(11), 1361–1364.

By: K. Jones, J. Chen, S. Bharatan, J. Jackson, L. Rubin, L. Puga, D. Venables

Source: NC State University Libraries
Added: August 6, 2018