@article{ban_ozturk_misra_wortman_venables_maher_1999, title={A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1391744}, abstractNote={This paper describes an in situ boron‐doped, multilayer epitaxial silicon process that can be used to obtain doping profiles for channels in the deep‐submicron regime. We have extensively studied lightly doped channel structures in which an intrinsic silicon layer is grown on an in situ doped epitaxial silicon film. Low‐thermal‐budget processing is achieved by the ultrahigh‐vacuum rapid thermal chemical vapor deposition technique which combines low‐temperature surface preparation and deposition (≤800°C) while providing high growth rates using disilane . Boron doping is achieved using diborane diluted in hydrogen (500 ppm) as the precursor. Temperature and gas switching are compared in terms of doping transition, interface contamination (carbon and oxygen incorporation), and impurity diffusion upon annealing. Our results reveal that for a contamination‐free epitaxial silicon interface, interfacial carbon contamination must be eliminated or reduced to a minimum level. Using this process, short‐channel n‐channel metal‐oxide semiconductor devices μm) have been fabricated for the first time demonstrating the potential use of the technique. It was found that lightly doped channel metal‐oxide semiconductor field effect transistors are more easily scalable into the 0.1 μm regime with superior short‐channel characteristics. © 1999 The Electrochemical Society. All rights reserved.}, number={3}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Ban, I and Ozturk, MC and Misra, V and Wortman, JJ and Venables, D and Maher, DM}, year={1999}, month={Mar}, pages={1189–1196} }
 @misc{diebold_venables_chabal_muller_weldon_garfunkel_1999, title={Characterization and production metrology of thin transistor gate oxide films}, volume={2}, ISSN={["1873-4081"]}, DOI={10.1016/S1369-8001(99)00009-8}, abstractNote={The thickness of silicon dioxide that is used as the transistor gate dielectric in most advanced memory and logic applications has decreased below 7 nm. Unfortunately, the accuracy and reproducibility of metrology used to measure gate dielectric thickness during manufacture of integrated circuits remains in some dispute. In addition, detailed materials characterization studies have resulted in a variety of descriptions for the oxide-interface–substrate system. Part of the problem is that each method measures a different quantity. Another related issue concerns how one should define and model the critical dielectric/substrate interface. As scaling continues, the interface between silicon dioxide and silicon becomes a larger part of the total thickness of the oxide film. Although materials characterization studies have focused on this interface, there have been few attempts to compare the results of these methods based on an understanding of the models used to interpret the data. In this review, we describe the physical and electrical characterization of the interfacial layer. Infrared absorption data are reviewed and previous interpretations of the LO/TO phonon shifts as a function of oxide thickness are refined. We correlate the available results between physical methods and between physical and electrical methods. This information is essential to inclusion of an interfacial layer in optical models used to measure silicon dioxide inside the clean room. We also describe some characterization issues for nitrided oxides.}, number={2}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, author={Diebold, AC and Venables, D and Chabal, Y and Muller, D and Weldon, M and Garfunkel, E}, year={1999}, month={Jul}, pages={103–147} }
 @article{henson_ahmed_vogel_hauser_wortman_venables_xu_venables_1999, title={Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors}, volume={20}, ISSN={["0741-3106"]}, DOI={10.1109/55.753759}, abstractNote={High-frequency capacitance-voltage (C-V) measurements have been made on ultrathin oxide metal-oxide-semiconductor (MOS) capacitors. The sensitivity of extracted oxide thickness to series resistance and gate leakage is demonstrated. Guidelines are outlined for reliable and accurate estimation of oxide thickness from C-V measurements for oxides down to 1.4 nm.}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Henson, WK and Ahmed, KZ and Vogel, EM and Hauser, JR and Wortman, JJ and Venables, RD and Xu, M and Venables, D}, year={1999}, month={Apr}, pages={179–181} }
 @article{pa o'neil_ozturk_batchelor_venables_xu_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392052}, abstractNote={In this report, we present results on the low thermal budget deposition of selective silicon epitaxy on heavily arsenic implanted substrates using Si 2 H 6 and Cl 2 in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. The selectivity of silicon to SiO 2 as well as the silicon growth kinetics, epitaxial quality, and dopant incorporation for varying substrate implant dose conditions and varying levels of chlorine during processing were investigated. We demonstrate that an increase in the arsenic implant dose can reduce the silicon growth by means of an inherent incubation time for deposition occurring in a chlorinated ambient. The extent to which the silicon growth suppression occurs, however, can be lessened by specific changes in the system conditions, and therefore, growth reductions due to arsenic can be minimized. In addition to changes in the silicon growth kinetics, arsenic implanted substrates have demonstrated a tendency to degrade the surface morphology and enhance the density of defects within the deposited silicon epitaxial films. Furthermore, by depositing the silicon film immediately following implantation and prior to any high temperature anneal, movement of arsenic into the deposited silicon layers has been observed at growth temperatures as low as 800°C. Therefore, the incorporation of arsenic into the deposited epitaxial films has been found to be controllable such that abrupt profiles or intentional diffuse structures can be achieved by variation of the process sequence and the annealing conditions.}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Venables, D and Xu, MM and Maher, DM}, year={1999}, month={Aug}, pages={3070–3078} }
 @article{pa o'neil_ozturk_batchelor_venables_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392053}, abstractNote={In this report, we present results on the low thermal budget deposition of selective silicon epitaxy on heavily arsenic implanted substrates using and in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. The selectivity of silicon to as well as the silicon growth kinetics, epitaxial quality, and dopant incorporation for varying substrate implant dose conditions and varying levels of chlorine during processing were investigated. We demonstrate that an increase in the arsenic implant dose can reduce the silicon growth by means of an inherent incubation time for deposition occurring in a chlorinated ambient. The extent to which the silicon growth suppression occurs, however, can be lessened by specific changes in the system conditions, and therefore, growth reductions due to arsenic can be minimized. In addition to changes in the silicon growth kinetics, arsenic implanted substrates have demonstrated a tendency to degrade the surface morphology and enhance the density of defects within the deposited silicon epitaxial films. Furthermore, by depositing the silicon film immediately following implantation and prior to any high temperature anneal, movement of arsenic into the deposited silicon layers has been observed at growth temperatures as low as 800°C. Therefore, the incorporation of arsenic into the deposited epitaxial films has been found to be controllable such that abrupt profiles or intentional diffuse structures can be achieved by variation of the process sequence and the annealing conditions. © 1999 The Electrochemical Society. All rights reserved.}, number={8}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={PA O'Neil and Ozturk, MC and Batchelor, AD and Venables, D and Maher, DM}, year={1999}, month={Aug}, pages={3079–3086} }
 @article{neogi_venables_na_maher_1998, title={Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si}, volume={16}, ISSN={["1071-1023"]}, DOI={10.1116/1.589832}, abstractNote={Transmission electron microscopy (TEM) was used to characterize image contrast obtained from doping-dependent etching of p-n junctions in silicon. The local variations in crystal thickness give rise to the appearance of thickness fringes which may be interpreted as two-dimensional iso-concentration contours that map the dopant distribution. The samples used for the study consisted of solid source diffusions of boron into substrates of varying resistivities of both n- and p-type. The factors which affect the interpretation of dopant profiles obtained from selective chemical etching of cross section TEM samples is addressed. One-dimensional chemical dopant concentration data were derived from secondary ion mass spectroscopy and one-dimensional carrier concentration data were derived from spreading resistance profiling.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Neogi, SS and Venables, D and Na, ZY and Maher, DM}, year={1998}, pages={471–475} }
 @article{venables_jain_collins_1998, title={Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update}, volume={16}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Venables, D. and Jain, H. and Collins, D. C.}, year={1998}, pages={362–366} }
 @article{krishnamoorthy_moller_jones_venables_jackson_rubin_1998, title={Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si}, volume={84}, ISSN={["1089-7550"]}, DOI={10.1063/1.368896}, abstractNote={(001) CZ silicon wafers were implanted with As+ at 100 keV to a dose of 1×1015/cm2 in order to produce a continuous amorphous layer to a depth of about 120 nm. Furthermore, the implant condition was such that the peak arsenic concentration was below the arsenic clustering threshold. Subsequently, a second As+ or Ge+ implant was performed at 30 keV to doses of 2×1015/cm2, 5×1015/cm2 and 1×1016/cm2, respectively, into the as-implanted samples. All of the samples were annealed at 800 °C for 1 h. The second implant was designed to be contained within the amorphous region created by the initial implant. The second As+ implant was also designed to provide the additional arsenic needed to exceed the critical concentration for clustering at the projected range. Of the three samples with the dual As+ implant the clustering threshold was exceeded for the two lower doses while the SiAs precipitation threshold was exceeded at the highest dose. In the case of the dual As+/Ge+ implants the clustering and precipitation thresholds were not reached. Since arsenic and germanium are similar in mass the extent of damage created by these implants would be comparable. The implanted and annealed specimens were analyzed using secondary ion mass spectroscopy and transmission electron microscopy. The difference in the defect evolution and the transient-enhanced diffusion of arsenic beyond the end-of-range region between the As+ and Ge+ implanted and annealed samples was used to isolate the effects of arsenic clustering and precipitation. The results showed that point defects induced during clustering and/or precipitation did not contribute to the enhanced diffusion of arsenic although these defects did coalesce to form extended defects at the projected range. However, damage beyond the end-of-range region did cause enhanced diffusion of arsenic.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Krishnamoorthy, V and Moller, K and Jones, KS and Venables, D and Jackson, J and Rubin, L}, year={1998}, month={Dec}, pages={5997–6002} }
 @article{neogi_venables_ma_maher_taylor_corcoran_1997, title={Mapping two-dimensional arsenic distributions in silicon using dopant-selective chemical etching technique}, volume={82}, ISSN={["0021-8979"]}, DOI={10.1063/1.366449}, abstractNote={Transmission electron microscopy (TEM) image contrast was used to characterize doping-dependent etching of n+/p junctions in silicon. The local variations in crystal thickness give rise to the appearance of thickness fringes which may be interpreted as two-dimensional iso-concentration contours that map the dopant distribution. The etchant solution used for selective chemical etching of TEM samples prepared using wedge technique was modified to reduce the etch rate and maintain high selectivity to the n+ doped region. The two-dimensional dopant profiles were quantified by calibrating against one-dimensional secondary ion mass spectroscopy data and also compared with one-dimensional spreading resistance analysis data.}, number={11}, journal={JOURNAL OF APPLIED PHYSICS}, author={Neogi, SS and Venables, D and Ma, ZY and Maher, DM and Taylor, M and Corcoran, S}, year={1997}, month={Dec}, pages={5811–5815} }
 @article{jones_chen_bharatan_jackson_rubin_pugalambers_venables_1997, title={The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon}, volume={26}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-997-0085-9}, number={11}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Jones, KS and Chen, J and Bharatan, S and Jackson, J and Rubin, L and PugaLambers, M and Venables, D}, year={1997}, month={Nov}, pages={1361–1364} }