@article{ban_ozturk_misra_wortman_venables_maher_1999, title={A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering}, volume={146}, DOI={10.1149/1.1391744}, number={3}, journal={Journal of the Electrochemical Society}, author={Ban, I. and Ozturk, M. C. and Misra, Veena and Wortman, J. J. and Venables, D. and Maher, D. M.}, year={1999}, pages={1189–1196} }
 @article{diebold_venables_chabal_muller_weldon_garfunkel_1999, title={Characterization and production metrology of thin transistor gate oxide films}, volume={2}, DOI={10.1016/S1369-8001(99)00009-8}, number={2}, journal={Materials Science in Semiconductor Processing}, author={Diebold, A. C. and Venables, D. and Chabal, Y. and Muller, D. and Weldon, M. and Garfunkel, E.}, year={1999}, pages={103–147} }
 @article{henson_ahmed_vogel_hauser_wortman_venables_xu_venables_1999, title={Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors}, volume={20}, DOI={10.1109/55.753759}, number={4}, journal={IEEE Electron Device Letters}, author={Henson, W. K. and Ahmed, K. Z. and Vogel, E. M. and Hauser, J. R. and Wortman, J. J. and Venables, R. D. and Xu, M. and Venables, D.}, year={1999}, pages={179–181} }
 @article{o'neil_ozturk_batchelor_venables_xu_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - I. Role of implanted BF2}, volume={146}, DOI={10.1149/1.1392052}, number={8}, journal={Journal of the Electrochemical Society}, author={O'Neil, P. A. and Ozturk, M. C. and Batchelor, A. D. and Venables, D. and Xu, M. M. and Maher, D. M.}, year={1999}, pages={3070–3078} }
 @article{o'neil_ozturk_batchelor_venables_maher_1999, title={Growth of selective silicon epitaxy using disilane and chlorine on heavily implanted substrates - II. Role of implanted arsenic}, volume={146}, DOI={10.1149/1.1392053}, number={8}, journal={Journal of the Electrochemical Society}, author={O'Neil, P. A. and Ozturk, M. C. and Batchelor, A. D. and Venables, D. and Maher, D. M.}, year={1999}, pages={3079–3086} }
 @article{neogi_venables_na_maher_1998, title={Factors affecting two-dimensional dopant profiles obtained by transmission electron microscopy of etched p-n junctions in Si}, volume={16}, DOI={10.1116/1.589832}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Neogi, S. S. and Venables, D. and Na, Z. Y. and Maher, D. M.}, year={1998}, pages={471–475} }
 @article{venables_jain_collins_1998, title={Secondary electron imaging as a two-dimensional dopant profiling technique: Review and update}, volume={16}, number={1}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Venables, D. and Jain, H. and Collins, D. C.}, year={1998}, pages={362–366} }
 @article{krishnamoorthy_moller_jones_venables_jackson_rubin_1998, title={Transient enhanced diffusion and defect microstructure in high dose, low energy As+ implanted Si}, volume={84}, DOI={10.1063/1.368896}, number={11}, journal={Journal of Applied Physics}, author={Krishnamoorthy, V. and Moller, K. and Jones, K. S. and Venables, D. and Jackson, J. and Rubin, L.}, year={1998}, pages={5997–6002} }
 @article{neogi_venables_ma_maher_taylor_corcoran_1997, title={Mapping two dimensional arsenic distributions in silicon using dopant selective chemical etching technique}, volume={82}, DOI={10.1063/1.366449}, number={11}, journal={Journal of Applied Physics}, author={Neogi, S. S. and Venables, D. and Ma, Z. Y. and Maher, D. M. and Taylor, M. and Corcoran, S.}, year={1997}, pages={5811–5815} }
 @article{jones_chen_bharatan_jackson_rubin_puga_venables_1997, title={The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon}, volume={26}, DOI={10.1007/s11664-997-0085-9}, number={11}, journal={Journal of Electronic Materials}, author={Jones, K. S. and Chen, J. and Bharatan, S. and Jackson, J. and Rubin, L. and Puga, Lambers M. and Venables, D.}, year={1997}, pages={1361–1364} }