1997 journal article

Optimization of process conditions for selective silicon epitaxy using disilane, hydrogen, and chlorine

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(9), 3309–3315.

By: P. ONeil n, M. Ozturk n, K. Violette n, D. Batchelor n, K. Christensen n & D. Maher n

Source: Web Of Science
Added: August 6, 2018

1996 article

Sub-half micron elevated source/drain NMOSFETs by low temperature selective epitaxial deposition

RAPID THERMAL AND INTEGRATED PROCESSING V, Vol. 429, pp. 343–347.

By: J. Sun n, R. Bartholomew n, K. Bellur n, P. ONeil n, A. Srivastava n, K. Violette n, M. Ozturk, C. Osburn n, N. Masnari n

Source: Web Of Science
Added: August 6, 2018

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