Eric Matthew Vogel

A comparison of thickness values for very thin SiO2 films by using ellipsometric, capacitance-voltage, and HRTEM measurements

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(1), F12–F19.

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

APPLIED PHYSICS LETTERS, 80(7), 1282–1284.

Study of low-frequency charge pumping on thin stacked dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(12), 2754–2762.

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1393–1400.

Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

IEEE Transactions on Electron Devices, 47(3), 601–608.

Electrical properties of oxynitride thin films using noise and charge pumping measurements

Masson, P., Morfouli, P., Autran, J. L., Brini, J., Balland, B., Vogel, E. M., & Wortman, J. J. (1999, April 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 245, pp. 54–58.

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181.

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, JR, & Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 295–298.

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs

RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170.

Modeled tunnel currents for high dielectric constant dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355.

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

SOLID-STATE ELECTRONICS, 41(7), 1051–1055.