Works (12)

2006 journal article

A comparison of thickness values for very thin SiO2 films by using ellipsometric, capacitance-voltage, and HRTEM measurements

Journal of the Electrochemical Society, 153(1), F12–19.

By: J. Ehrstein, C. Richter, D. Chandler-Horowitz, E. Vogel, C. Young, S. Shah, D. Maher, B. Foran, P. Hung, A. Diebold

Source: NC State University Libraries
Added: August 6, 2018

2002 journal article

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

Applied Physics Letters, 80(7), 1282–1284.

By: J. Suehle, E. Vogel, P. Roitman, J. Conley, A. Johnston, B. Wang, J. Bernstein, C. Weintraub

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Study of low-frequency charge pumping on thin stacked dielectrics

IEEE Transactions on Electron Devices, 48(12), 2754–2762.

By: C. Weintraub, E. Vogel, J. Hauser, N. Yang, V. Misra, J. Wortman, J. Ganem, P. Masson

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

IEEE Transactions on Electron Devices, 47(7), 1393–1400.

By: W. Henson, N. Yang, S. Kubicek, E. Vogel, J. Wortman, K. De Meyer, A. Naem

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

IEEE Transactions on Electron Devices, 47(3), 601–608.

By: E. Vogel, W. Henson, C. Richter & J. Suehle

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Electrical properties of oxynitride thin films using noise and charge pumping measurements

Journal of Non-Crystalline Solids, 245(1999 Apr. 1), 54–58.

By: P. Masson, P. Morfouli, J. Autran, J. Brini, B. Balland, E. Vogel, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

IEEE Electron Device Letters, 20(4), 179–181.

By: W. Henson, K. Ahmed, E. Vogel, J. Hauser, J. Wortman, R. Venables, M. Xu, D. Venables

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Microelectronic Engineering, 48(1-4), 295–298.

By: A. Shanware, H. Massoud, E. Vogel, K. Henson, J. Hauser & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

By: V. Li, M. Mirabedini, E. Vogel, K. Henson, A. Batchelor, J. Wortman, R. Kuehn

Source: NC State University Libraries
Added: August 6, 2018

1998 conference paper

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 ?m PMOSFETs

Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 163–170.

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Modeled tunnel currents for high dielectric constant dielectrics

IEEE Transactions on Electron Devices, 45(6), 1350–1355.

By: E. Vogel, K. Ahmed, B. Hornung, W. Henson, P. McLarty, G. Lucovsky, J. Hauser, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

Solid-State Electronics, 41(7), 1051–1055.

By: P. Morfouli, G. Ghibaudo, E. Vogel, W. Hill, V. Misra, P. McLarty, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018