2000 journal article
Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics
IEEE Transactions on Electron Devices, 47(3), 601–608.
1999 journal article
Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling
Microelectronic Engineering, 48(1-4), 295–298.
1998 journal article
Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD
Electrochemical and Solid State Letters, 1(3), 153–155.
1998 conference paper
Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 ?m PMOSFETs
Rapid thermal and integrated processing VII: Symposium held April 13-15, 1998, San Francisco, California, U.S.A. (Materials Research Society symposium proceedings ; v.525), 163–170.
1997 journal article
Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition
Solid-State Electronics, 41(7), 1051–1055.