Eric Matthew Vogel

Works (12)

Updated: July 5th, 2023 16:04

2005 article

A Comparison of Thickness Values for Very Thin SiO[sub 2] Films by Using Ellipsometric, Capacitance-Voltage, and HRTEM Measurements

Ehrstein, J., Richter, C., Chandler-Horowitz, D., Vogel, E., Young, C., Shah, S., … Diebold, A. (2005, December 21). Journal of The Electrochemical Society.

By: J. Ehrstein*, C. Richter *, D. Chandler-Horowitz*, E. Vogel*, C. Young  n, S. Shah n, D. Maher n, B. Foran, P. Hung, A. Diebold

topics (OpenAlex): Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis; Electron and X-Ray Spectroscopy Techniques
Source: Web Of Science
Added: August 6, 2018

2002 article

Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation

Suehle, J. S., Vogel, E. M., Roitman, P., Conley, J. F., Johnston, A. H., Wang, B., … Weintraub, C. E. (2002, February 18). Applied Physics Letters.

By: J. Suehle*, E. Vogel*, P. Roitman*, J. Conley *, A. Johnston*, B. Wang *, J. Bernstein *, C. Weintraub n

topics (OpenAlex): Semiconductor materials and devices; Electronic and Structural Properties of Oxides; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

2001 article

Study of low-frequency charge pumping on thin stacked dielectrics

Weintraub, C. E., Vogel, E., Hauser, J. R., Yang, N., Misra, V., Wortman, J. J., … Masson, P. (2001, January 1). IEEE Transactions on Electron Devices, Vol. 48, pp. 2754–2762.

By: C. Weintraub n, E. Vogel*, J. Hauser n, N. Yang*, V. Misra n , J. Wortman n, J. Ganem*, P. Masson *

author keywords: bulk traps; charge pumping; interface traps; low frequency; near-interface traps; nitrides; oxynitrides
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 article

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

Henson, W. K., Yang, N., Kubicek, S., Vogel, E. M., Wortman, J. J., Meyer, K. D., & Naem, A. (2000, July 1). IEEE Transactions on Electron Devices.

By: W. Henson*, N. Yang*, S. Kubicek *, E. Vogel*, J. Wortman n, K. Meyer*, A. Naem*

author keywords: MOS devices; off-state leakage; power consumption; ultrathin gate oxide
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices
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7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics

IEEE Transactions on Electron Devices, 47(3), 601–608.

By: E. Vogel, W. Henson, C. Richter & J. Suehle

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Electrical properties of oxynitride thin films using noise and charge pumping measurements

Masson, P., Morfouli, P., Autran, J. L., Brini, J., Balland, B., Vogel, E. M., & Wortman, J. J. (1999, April 1). Journal of Non-Crystalline Solids.

By: P. Masson *, P. Morfouli, J. Autran *, J. Brini, B. Balland*, E. Vogel n, J. Wortman n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Ferroelectric and Negative Capacitance Devices
Source: Web Of Science
Added: August 6, 2018

1999 article

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, J. R., Wortman, J. J., Venables, R. D., … Venables, D. (1999, April 1). IEEE Electron Device Letters.

By: W. Henson n, K. Ahmed*, E. Vogel*, J. Hauser n, J. Wortman n, R. Venables n, M. Xu  n, D. Venables n

topics (OpenAlex): Semiconductor materials and devices; Semiconductor materials and interfaces; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

1999 article

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and dielectrics with oxide scaling

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, J. R., & Wortman, J. J. (1999, September 1). Microelectronic Engineering.

By: A. Shanware*, H. Massoud*, E. Vogel n, K. Henson n, J. Hauser n & J. Wortman n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

By: V. Li, M. Mirabedini, E. Vogel, K. Henson, A. Batchelor, J. Wortman, R. Kuehn

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Evaluation Of 2.0 nm Grown and Deposited Dielectrics in 0.1 μm PMOSFETs

Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., … Hauser, J. R. (1998, January 1). MRS Proceedings.

By: A. Srivastava n, H. Heinisch n, E. Vogel n, C. Parker n, C. Osburn n, N. Masnari n, J. Wortman n, J. Hauser n

Ed(s):

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

1998 article

Modeled tunnel currents for high dielectric constant dielectrics

Vogel, E. M., Ahmed, K. Z., Hornung, B., Henson, W. K., McLarty, P. K., Lucovsky, G., … Wortman, J. J. (1998, June 1). IEEE Transactions on Electron Devices.

By: E. Vogel n, K. Ahmed n, B. Hornung n, W. Henson n, P. McLarty*, G. Lucovsky n, J. Hauser n, J. Wortman n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Electrostatic Discharge in Electronics
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

Morfouli, P., Ghibaudo, G., Vogel, E. M., Hill, W. L., Misra, V., McLarty, P. K., & Wortman, J. J. (1997, July 1). Solid-State Electronics, Vol. 41, pp. 1051–1055.

By: P. Morfouli, G. Ghibaudo, E. Vogel n, W. Hill n, V. Misra n , P. McLarty n, J. Wortman n

topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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