Eric Matthew Vogel

Ehrstein, J., Richter, C., Chandler-Horowitz, D., Vogel, E., Young, C., Shah, S., … Diebold, A. (2006). A comparison of thickness values for very thin SiO2 films by using ellipsometric, capacitance-voltage, and HRTEM measurements. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 153(1), F12–F19. https://doi.org/10.1149/1.2133710

Suehle, J. S., Vogel, E. M., Roitman, P., Conley, J. F., Johnston, A. H., Wang, B., … Weintraub, C. E. (2002). Observation of latent reliability degradation in ultrathin oxides after heavy-ion irradiation. APPLIED PHYSICS LETTERS, 80(7), 1282–1284. https://doi.org/10.1063/1.1448859

Weintraub, C. E., Vogel, E., Hauser, JR, Yang, N., Misra, V., Wortman, J. J., … Masson, P. (2001). Study of low-frequency charge pumping on thin stacked dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(12), 2754–2762. https://doi.org/10.1109/16.974700

Henson, W. K., Yang, N., Kubicek, S., Vogel, E. M., Wortman, J. J., De Meyer, K., & Naem, A. (2000). Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1393–1400. https://doi.org/10.1109/16.848282

Vogel, E. M., Henson, W. K., Richter, C. A., & Suehle, J. S. (2000). Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics. IEEE Transactions on Electron Devices, 47(3), 601–608.

Masson, P., Morfouli, P., Autran, J. L., Brini, J., Balland, B., Vogel, E. M., & Wortman, J. J. (1999, April 1). Electrical properties of oxynitride thin films using noise and charge pumping measurements. JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 245, pp. 54–58. https://doi.org/10.1016/S0022-3093(98)00870-9

Henson, W. K., Ahmed, K. Z., Vogel, E. M., Hauser, JR, Wortman, J. J., Venables, R. D., … Venables, D. (1999). Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors. IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181. https://doi.org/10.1109/55.753759

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, JR, & Wortman, J. J. (1999, September). Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 295–298. https://doi.org/10.1016/s0167-9317(99)00392-5

Li, V. Z. Q., Mirabedini, M. R., Vogel, E., Henson, K., Batchelor, A. D., Wortman, J. J., & Kuehn, R. T. (1998). Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD. Electrochemical and Solid State Letters, 1(3), 153–155.

Srivastava, A., Heinisch, H. H., Vogel, E., Parker, C., Osburn, C. M., Masnari, N. A., … Hauser, JR. (1998). Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs. RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170. https://doi.org/10.1557/proc-525-163

Vogel, E. M., Ahmed, K. Z., Hornung, B., Henson, W. K., McLarty, P. K., Lucovsky, G., … Wortman, J. J. (1998). Modeled tunnel currents for high dielectric constant dielectrics. IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355. https://doi.org/10.1109/16.678572

Morfouli, P., Ghibaudo, G., Vogel, E. M., Hill, W. L., Misra, V., McLarty, P. K., & Wortman, J. J. (1997). Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition. SOLID-STATE ELECTRONICS, 41(7), 1051–1055. https://doi.org/10.1016/S0038-1101(97)00019-1