Brandon Lea Ward

Measurement of field emission from nitrogen-doped diamond films

Diamond and Related Materials, 9(9-10), 1569–1573.

Schottky barrier height and electron affinity of titanium on AIN

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2082–2087.

Field emission properties of nitrogen-doped diamond films

Journal of Applied Physics, 86(7), 3973–3982.

Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy

Applied Surface Science, 146(1-4), 287–294.

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 2170–2177.

Characterization of electron emitting surfaces of diamond and III-V nitrides

Diamond Films and Technology, 8(4), 211–223.

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

Journal of Applied Physics, 84(9), 5238–5242.

Electron emission properties of crystalline diamond and III-nitride surfaces

Applied Surface Science, 132(1998 June), 694–703.

Structural and electronic properties of boron nitride thin films containing silicon

Journal of Applied Physics, 84(9), 5046–5051.

Characterization of metal-diamond interfaces: electron affinity and Schottky barrier height

Diamond and Related Materials, 6(2-4), 398–402.

Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy

Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532–535.

Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications

Applied Physics Letters, 71(16), 2289–2291.