2000 journal article
Measurement of field emission from nitrogen-doped diamond films
Diamond and Related Materials, 9(9-10), 1569–1573.
2000 journal article
Schottky barrier height and electron affinity of titanium on AIN
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2082–2087.
1999 journal article
Field emission properties of nitrogen-doped diamond films
Journal of Applied Physics, 86(7), 3973–3982.
1999 journal article
Imaging electron emission from diamond and III-V nitride surfaces with photo-electron emission microscopy
Applied Surface Science, 146(1-4), 287–294.
1999 journal article
Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces
Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 17(4), 2170–2177.
1998 journal article
Characterization of electron emitting surfaces of diamond and III-V nitrides
Diamond Films and Technology, 8(4), 211–223.
1998 journal article
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
Journal of Applied Physics, 84(9), 5238–5242.
1998 journal article
Electron emission properties of crystalline diamond and III-nitride surfaces
Applied Surface Science, 132(1998 June), 694–703.
1998 journal article
Structural and electronic properties of boron nitride thin films containing silicon
Journal of Applied Physics, 84(9), 5046–5051.
1997 journal article
Characterization of metal-diamond interfaces: electron affinity and Schottky barrier height
Diamond and Related Materials, 6(2-4), 398–402.
1997 journal article
Growth of gan and a1(0.2)ga(0.8)n on patterned substrates via organometallic vapor phase epitaxy
Japanese Journal of Applied Physics. Part 2, Letters, 36(5a), L532–535.
1997 journal article
Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
Applied Physics Letters, 71(16), 2289–2291.