@misc{harris_gehrke_weeks_basceri_2008, title={Gallium nitride based high-electron mobility devices}, volume={7,326,971}, number={2008 Feb. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Gehrke, T. and Weeks, T. W. and Basceri, C.}, year={2008} }
 @misc{harris_gehrke_weeks_basceri_2008, title={Method of manufacturing gallium nitride based high-electron mobility devices}, volume={7,364,988}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Gehrke, T. and Weeks, T. W. and Basceri, C.}, year={2008} }
 @misc{weeks_linthicum_2007, title={Gallium nitride material devices and methods of forming the same}, volume={7,233,028}, number={2007 Jun. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Linthicum, K. J.}, year={2007} }
 @misc{borges_linthicum_weeks_gehrke_2005, title={Gallium nitride materials including thermally conductive regions}, volume={6,956,250}, number={2005 Oct. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Borges, R. and Linthicum, K. J. and Weeks, T. W. and Gehrke, T.}, year={2005} }
 @misc{weeks_piner_borges_linthicum_2003, title={Gallium nitride material devices and methods including backside vias}, volume={6,611,002}, number={2003 Aug. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Borges, R. M. and Linthicum, K. J.}, year={2003} }
 @misc{weeks_piner_gehrke_linthicum_2003, title={Gallium nitride materials and methods}, volume={6,649,287}, number={2003 Nov. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Gehrke, T. and Linthicum, K. J.}, year={2003} }
 @article{edwards_yoo_bremser_horton_perkins_weeks_liu_stall_kuech_davis_et al._1998, title={Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films}, volume={313}, ISSN={["0040-6090"]}, DOI={10.1016/S0040-6090(97)00815-8}, abstractNote={Abstract We report spectroscopic ellipsometry (SE) and low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (−3.8 to 3.5 kbar) thus far. SE allows us to assess the preparation of smooth and abrupt GaN surfaces by chemical treatments in real time, and, coupled with the reflectance data, the E d n /d E contribution to dispersion, which is important for laser action. The reflectance data explicitly show the non-linear behavior of the B-A and C-A splittings vs. the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal space analysis, allowing us to obtain band parameters such as Δ SO =17.0±1 meV and Δ CF =9.8±1 meV with increased confidence.}, number={1998 Feb.}, journal={THIN SOLID FILMS}, author={Edwards, NV and Yoo, SD and Bremser, MD and Horton, MN and Perkins, NR and Weeks, TW and Liu, H and Stall, RA and Kuech, TF and Davis, RF and et al.}, year={1998}, month={Feb}, pages={187–192} }
 @article{davis_weeks_bremser_tanaka_kern_sitar_ailey_perry_wang_1997, title={Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization}, volume={41}, ISSN={["1879-2405"]}, DOI={10.1016/S0038-1101(96)00152-9}, abstractNote={Abstract Thin films of AlN and GaN are deposited primarily via the common forms of organometallic vapor phase epitaxy (OMVPE) and molecular beam epitaxy (MBE). Sapphire is the most common substrate; however, a host of materials have been used with varying degrees of success. Both growth techniques have been employed by the authors to grow AlN and GaN primarily on 6H-SiC(0001). The mismatch in atomic layer stacking sequences along the growth direction produces inversion domain boundaries in the AlN at the SiC steps; this sequence problem may discourage the nucleation of GaN. Films of AlN and GaN grown by MBE at 650°C are textured; monocrystalline films are achieved at 1050°C by this technique and OMVPE. Donor and acceptor doping of GaN has been achieved via MBE without post growth annealing. Acceptor doping in CVD material requires annealing to displace the H from the Mg and eventually remove it from the material. High brightness light emitting diodes are commercially available; however, numerous concerns regarding metal and nitrogen sources, heteroepitaxial nucleation, the role of buffer layers, surface migration rates as a function of temperature, substantial defect densities and their effect on film and device properties, ohmic and rectifying contacts, wet and dry etching and suitable gate and field insulators must and are being addressed.}, number={2}, journal={SOLID-STATE ELECTRONICS}, author={Davis, RF and Weeks, TW and Bremser, MD and Tanaka, S and Kern, RS and Sitar, Z and Ailey, KS and Perry, WG and Wang, C}, year={1997}, month={Feb}, pages={129–134} }
 @article{bulman_doverspike_sheppard_weeks_kong_dieringer_edmond_brown_swindell_schetzina_1997, title={Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC}, volume={33}, ISSN={["0013-5194"]}, DOI={10.1049/el:19971025}, abstractNote={Room temperature pulsed-operation lasing has been achieved for the first time in an InGaN laser grown on a 6H-SiC substrate. The laser structure is an 8-well InGaN/GaN MQW having Al0.06Ga0.94N waveguide and Al0.13Ga0.87N cladding layers. The index-guided laser having uncoated cleaved facets emits at 402 nm with a threshold current Ith of 1.2 A (42V), corresponding to a current density of 48 kA/cm2. A narrow line width of 0.8 Å is observed at 1.09 Ith. Far field measurements indicate that the devices operate in the TEM01 mode with FWHP of 5.7 and 19° for the in-plane and perpendicular directions, respectively.}, number={18}, journal={ELECTRONICS LETTERS}, author={Bulman, GE and Doverspike, K and Sheppard, ST and Weeks, TW and Kong, HS and Dieringer, HM and Edmond, JA and Brown, JD and Swindell, JT and Schetzina, JF}, year={1997}, month={Aug}, pages={1556–1557} }
 @article{edwards_yoo_bremser_zheleva_horton_perkins_weeks_liu_stall_kuech_et al._1997, title={Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films}, volume={50}, ISSN={["0921-5107"]}, DOI={10.1016/s0921-5107(97)00151-7}, abstractNote={We report spectroscopic ellipsometry (SE) and low-temperature reflectance data on epitaxial GaN thin film samples covering the widest range of tensile and compressive stress (−3.8–3.5 kbar) thus far. SE allows us to assess the preparation of smooth and abrupt GaN surfaces by chemical treatments in real time, and, coupled with the reflectance data, the E dn/dE contribution to dispersion, which is important for laser action. The reflectance data explicitly show the nonlinear behavior of the B–A and C–A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal space analysis, allowing us to obtain band parameters such as ΔSO=17.0±1 meV and ΔCF=9.8±1 meV with increased confidence.}, number={1-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Edwards, NV and Yoo, SD and Bremser, MD and Zheleva, T and Horton, MN and Perkins, NR and Weeks, TW and Liu, H and Stall, RA and Kuech, TF and et al.}, year={1997}, month={Dec}, pages={134–141} }
 @article{edwards_yoo_bremser_weeks_nam_davis_liu_stall_horton_perkins_et al._1997, title={Variation of GaN valence bands with biaxial stress and quantification of residual stress}, volume={70}, ISSN={["0003-6951"]}, DOI={10.1063/1.119089}, abstractNote={Low-temperature reflectance data on epitaxial GaN thin-film samples covering the widest range of tensile and compressive stress (−3.8–3.5 kbar) thus far explicitly show the nonlinear behavior of the B–A and C–A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal-space analysis, allowing us to obtain band parameters such as ΔSO=17.0±1meV with increased confidence.}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Edwards, NV and Yoo, SD and Bremser, MD and Weeks, TW and Nam, OH and Davis, RF and Liu, H and Stall, RA and Horton, MN and Perkins, NR and et al.}, year={1997}, month={Apr}, pages={2001–2003} }
 @inproceedings{edwards_yoo_bremser_horton_perkins_weeks_liu_stall_kuech_davis_et al._1997, title={Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters}, DOI={10.1557/proc-449-781}, booktitle={III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449)}, publisher={Pittsburgh, Pa.: Materials Research Society}, author={Edwards, N. V. and Yoo, S. D. and Bremser, M. D. and Horton, M. N. and Perkins, N. R. and Weeks, T. W. and Liu, H. and Stall, R. A. and Kuech, T. F. and Davis, R. F. and et al.}, year={1997}, pages={781–786} }