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 @misc{harris_gehrke_weeks_basceri_2008, title={Method of manufacturing gallium nitride based high-electron mobility devices}, volume={7,364,988}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Gehrke, T. and Weeks, T. W. and Basceri, C.}, year={2008} }
 @misc{weeks_linthicum_2007, title={Gallium nitride material devices and methods of forming the same}, volume={7,233,028}, number={2007 Jun. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Linthicum, K. J.}, year={2007} }
 @misc{borges_linthicum_weeks_gehrke_2005, title={Gallium nitride materials including thermally conductive regions}, volume={6,956,250}, number={2005 Oct. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Borges, R. and Linthicum, K. J. and Weeks, T. W. and Gehrke, T.}, year={2005} }
 @misc{weeks_piner_borges_linthicum_2003, title={Gallium nitride material devices and methods including backside vias}, volume={6,611,002}, number={2003 Aug. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Weeks, T. W. and Piner, E. L. and Borges, R. M. and Linthicum, K. J.}, year={2003} }
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