Works (7)

Updated: April 11th, 2023 10:13

2000 journal article

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing

Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

By: D. Wolfe & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177.

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 207.

By: D. Wolfe, F. Wang, S. Habermehl & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

By: B. Hinds, F. Wang, D. Wolfe, C. Hinkle & G. Lucovsky

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 1035–1040.

By: D. Wolfe, F. Wang & G. Lucovsky

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.

By: A. Golz, G. Lucovsky, K. Koh, D. Wolfe, H. Niimi & H. Kurz

Source: NC State University Libraries
Added: August 6, 2018