D. M. Wolfe

Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing

Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177.

Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)

Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 207.

Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix

Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 1035–1040.

Plasma-assisted formation of low defect density SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.