D. M. Wolfe

Wolfe, D. M., & Lucovsky, G. (2000). Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing. Journal of Non-Crystalline Solids, 266(2000 May), 1009–1014.

Wolfe, D. M., Hinds, B. J., Wang, F., Lucovsky, G., Ward, B. L., Xu, M., … Maher, D. M. (1999). Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 17, pp. 2170–2177. https://doi.org/10.1116/1.581745

Hinds, B. J., Wang, F., Wolfe, D. M., Hinkle, C. L., & Lucovsky, G. (1998). Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2171–2176.

Wolfe, D. M., Wang, F., Habermehl, S., & Lucovsky, G. (1998). Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997). Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films, 16(1), 207.

Hinds, B. J., Wang, F., Wolfe, D. M., Hinkle, C. L., & Lucovsky, G. (1998). Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix. Journal of Non-Crystalline Solids, 230 (part A)(1998 May), 507–512.

Wolfe, D. M., Wang, F., & Lucovsky, G. (1997). Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, Vol. 15, pp. 1035–1040. https://doi.org/10.1116/1.580426

Golz, A., Lucovsky, G., Koh, K., Wolfe, D., Niimi, H., & Kurz, H. (1997). Plasma-assisted formation of low defect density SiC-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(4), 1097–1104.