Works (32)

Updated: July 5th, 2023 16:04

2001 journal article

A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs

MICROELECTRONICS RELIABILITY, 41(1), 37–46.

By: N. Yang* & J. Wortman n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

2001 journal article

Study of low-frequency charge pumping on thin stacked dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 48(12), 2754–2762.

By: C. Weintraub n, E. Vogel*, . Hauser n, N. Yang*, V. Misra n, J. Wortman n, J. Ganem*, P. Masson*

co-author countries: France 🇫🇷 United States of America 🇺🇸
author keywords: bulk traps; charge pumping; interface traps; low frequency; near-interface traps; nitrides; oxynitrides
Sources: Web Of Science, ORCID
Added: August 6, 2018

2000 journal article

A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(8), 1636–1644.

By: N. Yang n, W. Henson* & J. Wortman n

co-author countries: Belgium 🇧🇪 United States of America 🇺🇸
author keywords: band-to-band tunneling; gate-induced-drain-leakage current (GIDL); leakage current; modeling; MOS devices; power consumption; tunneling; ultrathin oxides
Source: Web Of Science
Added: August 6, 2018

2000 journal article

A two-dimensional numerical simulation of pulsed drain current transients in weak inversion and application to interface trap characterization on small geometry MOSFETs with ultrathin oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(11), 2236–2237.

By: K. Ahmed n, J. Wortman n & . Hauser n

co-author countries: United States of America 🇺🇸
author keywords: charge pumping; interface traps; ultrathin oxides; weak inversion
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1393–1400.

By: W. Henson*, N. Yang*, S. Kubicek*, E. Vogel*, J. Wortman n, K. De Meyer*, A. Naem*

co-author countries: Belgium 🇧🇪 United States of America 🇺🇸
author keywords: MOS devices; off-state leakage; power consumption; ultrathin gate oxide
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Comparative physical and electrical metrology of ultrathin oxides in the 6 to 1.5 nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1349–1354.

By: K. Ahmed*, E. Ibok*, G. Bains*, D. Chi*, B. Ogle*, J. Wortman n, . Hauser n

co-author countries: United States of America 🇺🇸
author keywords: capacitance-voltage; MOS; ultrathin
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(2), 440–447.

By: N. Yang*, W. Henson n, . Hauser n & J. Wortman n

co-author countries: Belgium 🇧🇪 United States of America 🇺🇸
author keywords: dielectric films; inversion layers; mobility; MOS devices; oxidation; quantization; scattering
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Limitations of the modified shift-and-ratio technique for extraction of the bias dependence of L-eff and R-sd of LDD MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(4), 891–895.

By: K. Ahmed n, I. De n, C. Osburn n, J. Wortman n & J. Hauser n

co-author countries: United States of America 🇺🇸
author keywords: effective channel length; LDD; mobility; MOSFET; series resistance; shift and ratio; thin oxides
Source: Web Of Science
Added: August 6, 2018

1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.

By: I. Ban*, M. Ozturk*, V. Misra*, J. Wortman*, D. Venables n & D. Maher n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Electrical characterization of n-channel MOSFETs with oxynitride gate dielectric formed by low-pressure Rapid Thermal Chemical Vapor Deposition

Microelectronic Engineering, 48(1-4), 211–214.

By: P. Masson, P. Morfouli, J. Autran & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Electrical properties of oxynitride thin films using noise and charge pumping measurements

Masson, P., Morfouli, P., Autran, J. L., Brini, J., Balland, B., Vogel, E. M., & Wortman, J. J. (1999, April 1). JOURNAL OF NON-CRYSTALLINE SOLIDS, Vol. 245, pp. 54–58.

By: P. Masson*, P. Morfouli, J. Autran*, J. Brini, B. Balland*, E. Vogel n, J. Wortman n

co-author countries: France 🇫🇷 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors

IEEE ELECTRON DEVICE LETTERS, 20(4), 179–181.

By: W. Henson n, K. Ahmed*, E. Vogel*, . Hauser n, J. Wortman n, R. Venables n, M. Xu n, D. Venables n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Impact of tunnel currents and channel resistance on the characterization of channel inversion layer charge and polysilicon-gate depletion of sub-20-angstrom gate oxide MOSFET's

IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(8), 1650–1655.

By: K. Ahmed n, E. Ibok*, G. Yeap*, Q. Xiang*, B. Ogle*, J. Wortman n, . Hauser n

co-author countries: United States of America 🇺🇸
author keywords: polysilicon-gate depletion; tunnel currents; ultrathin gate oxide
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Interfacial properties of ultrathin pure silicon nitride formed by remote plasma enhanced chemical vapor deposition

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 17(4), 1836–1839.

By: V. Misra, H. Lazar, Z. Wang, Y. Wu, H. Niimi, G. Lucovsky, J. Wortman, J. Hauser

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(7), 1464–1471.

By: N. Yang*, W. Henson, . Hauser & J. Wortman*

author keywords: capacitance; dielectric films; inversion layers; leakage currents; MOS devices; oxidation; quantization; tunneling
Source: Web Of Science
Added: August 6, 2018

1999 article

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, JR, & Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 295–298.

By: A. Shanware*, H. Massoud*, E. Vogel n, K. Henson n, . Hauser n & J. Wortman n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's

IEEE ELECTRON DEVICE LETTERS, 20(12), 605–607.

By: W. Henson n, N. Yang n & J. Wortman n

co-author countries: Belgium 🇧🇪 United States of America 🇺🇸
author keywords: breakdown; dielectric films; MOS devices; oxide
Source: Web Of Science
Added: August 6, 2018

1999 article

The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42.

By: A. Shanware, H. Massoud*, A. Acker, V. Li, M. Mirabedini*, K. Henson, . Hauser, J. Wortman*

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

By: V. Li, M. Mirabedini, E. Vogel, K. Henson, A. Batchelor, J. Wortman, R. Kuehn

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Evaluation of 2.0 nm grown and deposited dielectrics in 0.1 mu m PMOSFETs

RAPID THERMAL AND INTEGRATED PROCESSING VII, Vol. 525, pp. 163–170.

By: A. Srivastava n, H. Heinisch n, E. Vogel n, C. Parker n, C. Osburn n, N. Masnari n, J. Wortman n, . Hauser n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Impact of floating gate dopant concentration and interpoly dielectric processing on tunnel dielectric reliability

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(4), 1351–1355.

By: H. Heinisch n, B. Hornung n, R. Linkous n, S. Craig n, M. Mirabedini n & J. Wortman n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Modeled tunnel currents for high dielectric constant dielectrics

IEEE TRANSACTIONS ON ELECTRON DEVICES, 45(6), 1350–1355.

By: E. Vogel n, K. Ahmed n, B. Hornung n, W. Henson n, P. McLarty*, G. Lucovsky n, . Hauser n, J. Wortman n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.

By: V. Li n, M. Mirabedini n, B. Hornung n, H. Heinisch n, M. Xu n, D. Batchelor n, D. Maher n, J. Wortman n, R. Kuehn n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Electrical and reliability properties of thin silicon oxinitride dielectrics formed by low pressure rapid thermal chemical vapor deposition

SOLID-STATE ELECTRONICS, 41(7), 1051–1055.

By: P. Morfouli, G. Ghibaudo, E. Vogel n, W. Hill n, V. Misra n, P. McLarty n, J. Wortman n

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 journal article

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

By: V. Li n, M. Mirabedini n, R. Kuehn n, J. Wortman n, M. Ozturk n, D. Batchelor n, K. Christensen n, D. Maher n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1995 patent

Three-zone rapid thermal processing system utilizing wafer edge heating means

Washington, DC: U.S. Patent and Trademark Office.

By: J. Hauser, F. Sorrell & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1994 patent

Selective deposition of doped silicon-germanium alloy on semiconductor substrate, and resulting structures

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, D. Grider, M. Sanganeria, S. Ashburn & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1993 journal article

CENTER FOR ADVANCED ELECTRONIC MATERIALS PROCESSING

PROCEEDINGS OF THE IEEE, 81(1), 42–59.

By: N. Masnari n, . Hauser n, G. Lucovsky n, D. Maher n, R. Markunas*, M. Ozturk n, J. Wortman n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1993 patent

Conical rapid thermal processing apparatus

Washington, DC: U.S. Patent and Trademark Office.

By: J. Wortman, F. Sorrell, J. Hauser & M. Fordham

Source: NC State University Libraries
Added: August 6, 2018

1993 patent

Deposition of germanium thin films on silicon dioxide employing interposed polysilicon laye

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

Germanium silicon dioxide gate MOSFET

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1992 patent

Selective germanium deposition on silicon and resulting structures

Washington, DC: U.S. Patent and Trademark Office.

By: M. Ozturk, J. Wortman & D. Grider

Source: NC State University Libraries
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.