1991 patent
Dry etching of silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1990 patent
Bipolar junction transistor on silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1989 patent
Dry etching of silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
1989 patent
Metal-insulator-semiconductor capacitor formed on silicon carbide
Washington, DC: U.S. Patent and Trademark Office.
Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.
Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.