John W. Palmour Palmour, J. W. (1991). Dry etching of silicon carbide. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W., & Edmond, J. A. (1990). Bipolar junction transistor on silicon carbide. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W. (1989). Dry etching of silicon carbide. Washington, DC: U.S. Patent and Trademark Office. Palmour, J. W. (1989). Metal-insulator-semiconductor capacitor formed on silicon carbide. Washington, DC: U.S. Patent and Trademark Office.