2007 journal article
Why is stereoregular polyacrylonitrile obtained by polymerization in urea canals isotactic?
MACROMOLECULAR THEORY AND SIMULATIONS, 16(9), 797–809.
2000 journal article
Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.
Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics
Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). THIN SOLID FILMS, Vol. 374, pp. 217–227.
Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168.
Influence of microstructure size on the plastic deformation kinetics, fatigue crack growth rate, and low-cycle fatigue of solder joints
Conrad, H., Guo, Z., Fahmy, Y., & Yang, D. (1999, September). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 1062–1070.
1998 journal article
Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337.