Works (6)

Updated: July 5th, 2023 16:03

2007 article

Why is Stereoregular Polyacrylonitrile Obtained by Polymerization in Urea Canals Isotactic?

Yang, H., El‐Shafei, A., Schilling, F. C., & Tonelli, A. E. (2007, November 15). Macromolecular Theory and Simulations, Vol. 16, pp. 797–809.

By: H. Yang n, A. El‐Shafei n, F. Schilling & A. Tonelli n

Contributors: H. Yang n, A. El-Shafei n, F. Schilling & A. Tonelli n

author keywords: cycloclextrin channels; inclusion compounds; isotactic polyacrylonitrile (PAN); molecular modeling; syndiotactic polyacrylonitrile (PAN); urea channels
topics (OpenAlex): Metal-Organic Frameworks: Synthesis and Applications; Chemical Synthesis and Characterization; Crystallography and molecular interactions
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Sources: Web Of Science, ORCID
Added: August 6, 2018

2000 journal article

Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

By: G. Lucovsky, H. Yang, H. Niimi, M. Thorpe & J. Phillips

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Plasma processed ultra-thin SiO2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

Lucovsky, G., Yang, H., Wu, Y., & Niimi, H. (2000, October 1). Thin Solid Films.

By: G. Lucovsky n, H. Yang n, Y. Wu n & H. Niimi n

author keywords: stacked gate dielectrics; semiconductor dielectric interfaces; silicon oxynitride alloys; transition metal oxides; CMOS devices; plasma-assisted oxidation; nitridation and deposition
topics (OpenAlex): Semiconductor materials and devices; Silicon Nanostructures and Photoluminescence; Thin-Film Transistor Technologies
Source: Web Of Science
Added: August 6, 2018

2000 article

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. (2000, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: G. Lucovsky n, Y. Wu n, H. Niimi n, H. Yang n, J. Keister n & J. Rowe n

topics (OpenAlex): Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices; Advancements in Semiconductor Devices and Circuit Design
Source: Web Of Science
Added: August 6, 2018

1999 article

Influence of microstructure size on the plastic deformation kinetics, fatigue crack growth rate, and low-cycle fatigue of solder joints

Conrad, H., Guo, Z., Fahmy, Y., & Yang, D. (1999, September 1). Journal of Electronic Materials.

By: H. Conrad n, Z. Guo n, Y. Fahmy n & D. Yang n

author keywords: solder joints; low cycle fatigue; microstructure; deformation kinetics
topics (OpenAlex): Electronic Packaging and Soldering Technologies; Metallurgy and Material Forming; Aluminum Alloy Microstructure Properties
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Source: Web Of Science
Added: August 6, 2018

1998 article

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Yang, H. Y., Niimi, H., & Lucovsky, G. (1998, February 15). Journal of Applied Physics.

By: H. Yang n, H. Niimi n & G. Lucovsky n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

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