2007 journal article
Why is stereoregular polyacrylonitrile obtained by polymerization in urea canals isotactic?
MACROMOLECULAR THEORY AND SIMULATIONS, 16(9), 797–809.
Contributors: A. El-Shafei n , F. Schilling & A. Tonelli n n,
2000 journal article
Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics
Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.
2000 article
Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics
Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). THIN SOLID FILMS, Vol. 374, pp. 217–227.
2000 article
Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168.
1999 article
Influence of microstructure size on the plastic deformation kinetics, fatigue crack growth rate, and low-cycle fatigue of solder joints
Conrad, H., Guo, Z., Fahmy, Y., & Yang, D. (1999, September). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 1062–1070.
1998 journal article
Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337.
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