Hanyang Yang

Yang, H., El-Shafei, A., Schilling, F. C., & Tonelli, A. E. (2007). Why is stereoregular polyacrylonitrile obtained by polymerization in urea canals isotactic? MACROMOLECULAR THEORY AND SIMULATIONS, 16(9), 797–809. https://doi.org/10.1002/mats.200700043

Lucovsky, G., Yang, H., Niimi, H., Thorpe, M. F., & Phillips, J. C. (2000). Intrinsic limitations on ultimate device performance and reliability at (i) semiconductor-dielectric interfaces and (ii) internal interfaces in stacked dielectrics. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 18(4), 2179–2186.

Lucovsky, G., Yang, H. Y., Wu, Y., & Niimi, H. (2000, October 17). Plasma processed ultra-thin SiO2 interfaces far advanced silicon NMOS and PMOS devices: applications to Si-oxide Si oxynitride, Si-oxide Si nitride and Si-oxide transition metal oxide stacked gate dielectrics. THIN SOLID FILMS, Vol. 374, pp. 217–227. https://doi.org/10.1016/S0040-6090(00)01153-6

Lucovsky, G., Wu, Y., Niimi, H., Yang, H., Keister, J., & Rowe, J. E. (2000). Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1163–1168. https://doi.org/10.1116/1.582318

Conrad, H., Guo, Z., Fahmy, Y., & Yang, D. (1999, September). Influence of microstructure size on the plastic deformation kinetics, fatigue crack growth rate, and low-cycle fatigue of solder joints. JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 1062–1070. https://doi.org/10.1007/s11664-999-0184-x

Yang, H. Y., Niimi, H., & Lucovsky, G. (1998). Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices. JOURNAL OF APPLIED PHYSICS, 83(4), 2327–2337. https://doi.org/10.1063/1.366976