Nian Yang

A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs

MICROELECTRONICS RELIABILITY, 41(1), 37–46.

A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(8), 1636–1644.

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1393–1400.

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172.

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(2), 440–447.

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(7), 1464–1471.

Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's

IEEE ELECTRON DEVICE LETTERS, 20(12), 605–607.