2001 journal article

A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs

MICROELECTRONICS RELIABILITY, 41(1), 37–46.

By: N. Yang* & J. Wortman n

Source: Web Of Science
Added: August 6, 2018

2000 journal article

A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(8), 1636–1644.

By: N. Yang n, W. Henson* & J. Wortman n

co-author countries: Belgium πŸ‡§πŸ‡ͺ
author keywords: band-to-band tunneling; gate-induced-drain-leakage current (GIDL); leakage current; modeling; MOS devices; power consumption; tunneling; ultrathin oxides
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1393–1400.

By: W. Henson*, N. Yang*, S. Kubicek *, E. Vogel*, J. Wortman n, K. De Meyer*, A. Naem*

co-author countries: Belgium πŸ‡§πŸ‡ͺ
author keywords: MOS devices; off-state leakage; power consumption; ultrathin gate oxide
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172.

By: Z. Wang n, C. Parker*, D. Hodge*, R. Croswell*, N. Yang*, V. Misra, . Hauser

author keywords: Fermi level; flatband voltage; interface; ON
Source: Web Of Science
Added: August 6, 2018

2000 journal article

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides

IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(2), 440–447.

By: N. Yang*, W. Henson n, . Hauser  n & J. Wortman n

co-author countries: Belgium πŸ‡§πŸ‡ͺ
author keywords: dielectric films; inversion layers; mobility; MOS devices; oxidation; quantization; scattering
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(7), 1464–1471.

By: N. Yang*, W. Henson, . Hauser & J. Wortman*

author keywords: capacitance; dielectric films; inversion layers; leakage currents; MOS devices; oxidation; quantization; tunneling
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's

IEEE ELECTRON DEVICE LETTERS, 20(12), 605–607.

By: W. Henson n, N. Yang n & J. Wortman n

co-author countries: Belgium πŸ‡§πŸ‡ͺ
author keywords: breakdown; dielectric films; MOS devices; oxide
Source: Web Of Science
Added: August 6, 2018

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