2001 journal article
A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs
Microelectronics Reliability, 41(1), 37–46.
By: N. Yang & J. Wortman
2000 journal article
A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides
IEEE Transactions on Electron Devices, 47(8), 1636–1644.
By: N. Yang, W. Henson & J. Wortman
Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime
IEEE Transactions on Electron Devices, 47(7), 1393–1400.
By: W. Henson*, N. Yang, S. Kubicek*, E. Vogel, J. Wortman, K. De Meyer*, A. Naem*
Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks
IEEE Electron Device Letters, 21(4), 170–172.
By: Z. Wang, C. Parker, D. Hodge, R. Croswell, N. Yang, V. Misra n, J. Hauser
Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides
IEEE Transactions on Electron Devices, 47(2), 440–447.
By: N. Yang, W. Henson n, J. Hauser & J. Wortman
1999 journal article
Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices
IEEE Transactions on Electron Devices, 46(7), 1464–1471.
Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's
IEEE Electron Device Letters, 20(12), 605–607.
By: W. Henson n, N. Yang & J. Wortman