Nian Yang

Works (7)

Updated: July 5th, 2023 16:02

2001 article

A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs

Yang, N., & Wortman, J. J. (2001, January 1). Microelectronics Reliability.

By: N. Yang* & J. Wortman n

topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
TL;DR: It was concluded that the source/drain extension to the gate overlap regions have strong effects on the device performance in terms of both gate tunneling currents and oxide reliability. (via Semantic Scholar)
Source: Web Of Science
Added: August 6, 2018

2000 article

A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides

Yang, N., Henson, W. K., & Wortman, J. J. (2000, January 1). IEEE Transactions on Electron Devices.

By: N. Yang n, W. Henson* & J. Wortman n

author keywords: band-to-band tunneling; gate-induced-drain-leakage current (GIDL); leakage current; modeling; MOS devices; power consumption; tunneling; ultrathin oxides
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices
Source: Web Of Science
Added: August 6, 2018

2000 article

Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime

Henson, W. K., Yang, N., Kubicek, S., Vogel, E. M., Wortman, J. J., Meyer, K. D., & Naem, A. (2000, July 1). IEEE Transactions on Electron Devices.

By: W. Henson*, N. Yang*, S. Kubicek *, E. Vogel*, J. Wortman n, K. Meyer*, A. Naem*

author keywords: MOS devices; off-state leakage; power consumption; ultrathin gate oxide
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

2000 article

Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks

Wang, N. Z., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N. N., Misra, V., & Hauser, J. R. (2000, April 1). IEEE Electron Device Letters.

By: N. Wang n, C. Parker n, D. Hodge n, R. Croswell n, N. Yang n, V. Misra  n, J. Hauser n

author keywords: Fermi level; flatband voltage; interface; ON
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
Source: Web Of Science
Added: August 6, 2018

2000 article

Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides

Yang, N. N., Henson, W. K., Hauser, J. R., & Wortman, J. J. (2000, January 1). IEEE Transactions on Electron Devices.

By: N. Yang*, W. Henson n, J. Hauser n & J. Wortman n

author keywords: dielectric films; inversion layers; mobility; MOS devices; oxidation; quantization; scattering
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Integrated Circuits and Semiconductor Failure Analysis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices

Yang, N., Henson, W. K., Hauser, J. R., & Wortman, J. J. (1999, July 1). IEEE Transactions on Electron Devices.

By: N. Yang n, W. Henson n, J. Hauser n & J. Wortman n

author keywords: capacitance; dielectric films; inversion layers; leakage currents; MOS devices; oxidation; quantization; tunneling
topics (OpenAlex): Semiconductor materials and devices; Advancements in Semiconductor Devices and Circuit Design; Integrated Circuits and Semiconductor Failure Analysis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's

Henson, W. K., Yang, N., & Wortman, J. J. (1999, December 1). IEEE Electron Device Letters.

By: W. Henson n, N. Yang n & J. Wortman n

author keywords: breakdown; dielectric films; MOS devices; oxide
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Ferroelectric and Negative Capacitance Devices
Source: Web Of Science
Added: August 6, 2018

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