Emil L. Briggs

Works (8)

Updated: March 10th, 2025 12:14

2000 article

Large-Scale Applications of Real-Space Multigrid Methods to Surfaces, Nanotubes, and Quantum Transport

Bernholc, J., Briggs, E. L., Bungaro, C., Nardelli, M. B., Fattebert, J.-L., Rapcewicz, K., … Zhao, Q. (2000, January 1). Physica Status Solidi (b), Vol. 217, pp. 685–701.

By: J. Bernholc n , E. Briggs n, C. Bungaro n, M. Nardelli n, J. Fattebert n, K. Rapcewicz n, C. Roland n , W. Schmidt n, Q. Zhao n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Graphene research and applications; Advancements in Semiconductor Devices and Circuit Design
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2000 journal article

Optical Anisotropy of the SiC(001)-(3×2) Surface: Evidence for the Two-Adlayer Asymmetric-Dimer Model

Physical Review Letters, 85(20), 4381–4384.

By: W. Lu  n, W. Schmidt*, E. Briggs n & J. Bernholc n 

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Semiconductor materials and interfaces
TL;DR: The structure of the ( 3x2) reconstruction of beta-SiC(001) surface has been identified by comparing reflectance anisotropy spectra calculated from first principles with recent measurements, and only the calculations for the two-adlayer asymmetric-dimer model agree with experiment. (via Semantic Scholar)
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Sources: Web Of Science, Crossref, NC State University Libraries
Added: August 6, 2018

1999 article

Chemical and strain effects on Boron-doped Si(100)

Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999, February 15). Physical Review. B, Condensed Matter, Vol. 59, pp. 4813–4821.

By: M. Ramamoorthy n, E. Briggs n & J. Bernholc n 

topics (OpenAlex): Semiconductor materials and interfaces; Surface and Thin Film Phenomena; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 article

Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface

Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999, September 15). Physical Review. B, Condensed Matter, Vol. 60, pp. 8178–8184.

By: M. Ramamoorthy n, E. Briggs n & J. Bernholc n 

topics (OpenAlex): Silicon and Solar Cell Technologies; Semiconductor materials and interfaces; Semiconductor materials and devices
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Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 article

Structural fingerprints in the reflectance anisotropy spectra ofInP(001)(2×4)surfaces

Schmidt, W. G., Briggs, E. L., Bernholc, J., & Bechstedt, F. (1999, January 15). Physical Review. B, Condensed Matter, Vol. 59, pp. 2234–2239.

By: W. Schmidt n, E. Briggs n, J. Bernholc n  & F. Bechstedt  n

topics (OpenAlex): Semiconductor Quantum Structures and Devices; Advanced Chemical Physics Studies; Quantum and electron transport phenomena
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7. Affordable and Clean Energy (Web of Science; OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1998 article

Chemical Trends in Impurity Incorporation into Si(100)

Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1998, August 24). Physical Review Letters, Vol. 81, pp. 1642–1645.

By: M. Ramamoorthy n, E. Briggs n & J. Bernholc n 

topics (OpenAlex): Semiconductor materials and interfaces; Surface and Thin Film Phenomena; Ion-surface interactions and analysis
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1997 article

Real-space multigrid methods for large-scale electronic structure problems

Bernholc, J., Briggs, E. L., Sullivan, D. J., Brabec, C. J., Nardelli, M. B., Rapcewicz, K., … Wensell, M. (1997, January 1). International Journal of Quantum Chemistry, Vol. 65, pp. 531–543.

By: J. Bernholc n , E. Briggs n, D. Sullivan n, C. Brabec n, M. Nardelli n, K. Rapcewicz n, C. Roland n , M. Wensell n

topics (OpenAlex): Advanced Chemical Physics Studies; Advanced Data Storage Technologies; Physics of Superconductivity and Magnetism
TL;DR: The development and applications of a new electronic structure method that uses a real-space grid as a basis and new compact discretization schemes in real space for systems with cubic, orthorhombic, and hexagonal symmetry are described. (via Semantic Scholar)
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Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

1995 article

Native defects in gallium nitride

Bogusl/awski, P., Briggs, E. L., & Bernholc, J. (1995, June 15). Physical Review. B, Condensed Matter, Vol. 51, pp. 17255–17258.

By: P. Bogusl/awski n, E. Briggs n & J. Bernholc n 

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Ga2O3 and related materials
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

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