Works (3)

Updated: July 5th, 2023 15:49

2012 journal article

Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564.

By: K. Lai n, T. Paskova n, V. Wheeler n, T. Chung*, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

co-author countries: Taiwan, Province of China 🇹🇼 United States of America 🇺🇸
author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
Source: Web Of Science
Added: August 6, 2018

2010 journal article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905.

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

co-author countries: United States of America 🇺🇸
author keywords: Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light emitting diodes
Source: Web Of Science
Added: August 6, 2018

2009 journal article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

JOURNAL OF APPLIED PHYSICS, 106(11).

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, D. Barlage n, K. Udwary*, E. Preble*, K. Evans*

co-author countries: United States of America 🇺🇸
author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
Source: Web Of Science
Added: August 6, 2018

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