K. Y. Lai

Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., … Evans, K. R. (2012). Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564. https://doi.org/10.1002/pssa.201127345

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., … Evans, K. R. (2010). Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth. JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905. https://doi.org/10.1016/j.jcrysgro.2010.01.020

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., … Evans, K. R. (2009). Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, 106(11). https://doi.org/10.1063/1.3264729