Virginia D. Wheeler

Works (5)

Updated: July 5th, 2023 15:49

2011 article

Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN

Jur, J. S., Wheeler, V. D., Lichtenwalner, D. J., Maria, J.-P., & Johnson, M. A. L. (2011, January 24). Applied Physics Letters.

By: J. Jur n, V. Wheeler n, D. Lichtenwalner n, J. Maria n & M. Johnson n

topics (OpenAlex): Semiconductor materials and devices; GaN-based semiconductor devices and materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2011 article

Indium incorporation in InGaN/GaN quantum wells grown on m‐plane GaN substrate and c‐plane sapphire

Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., … Evans, K. R. (2011, November 29). Physica Status Solidi (a).

By: K. Lai n, T. Paskova n, V. Wheeler n, T. Chung *, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble*, K. Evans*

author keywords: cathodoluminescence; MOCVD; quantum wells; TEM; RSM
topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Semiconductor Quantum Structures and Devices
Source: Web Of Science
Added: August 6, 2018

2010 article

An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET’s with experimental demonstration

Park, J., Ozbek, A. M., Ma, L., Veety, M. T., Morgensen, M. P., Barlage, D. W., … Johnson, M. A. L. (2010, August 12). Solid-State Electronics.

By: J. Park  n, A. Ozbek n, L. Ma n, M. Veety n, M. Morgensen n, D. Barlage n, V. Wheeler n, M. Johnson n

author keywords: GaN; MOSFET; Schottky Source/Drain; Schottky barrier; Gate to Source overlap structure; Gate induced Schottky barrier lowering
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2010 article

Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., … Evans, K. R. (2010, January 22). Journal of Crystal Growth.

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, K. Udwary*, E. Preble *, K. Evans*

author keywords: Metalorganic chemical vapor deposition; Nitrides; Semiconducting III-V materials; Light emitting diodes
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2009 article

Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., … Evans, K. R. (2009, December 1). Journal of Applied Physics.

By: K. Lai n, T. Paskova n, V. Wheeler n, J. Grenko n, M. Johnson n, D. Barlage n, K. Udwary*, E. Preble *, K. Evans*

author keywords: cathodoluminescence; gallium compounds; III-V semiconductors; indium compounds; quantum confined Stark effect; semiconductor quantum wells; spectral line intensity; spectral line shift; wide band gap semiconductors
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

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