Richard A. Brown

Constructed storm-water wetland installation and maintenance: are we getting it right?

Journal of Irrigation and Drainage Engineering, 137(8), 469–474.

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

APPLIED PHYSICS LETTERS, 74(9), 1263–1265.

Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

Impurity gettering to secondary defects created by MeV ion implantation in silicon

JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465.

Critical temperature and ion flux dependence of amorphization in GaAs

JOURNAL OF APPLIED PHYSICS, 81(11), 7681–7683.

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881.

Nucleation-limited amorphization of GaAs at elevated temperatures

Physical Review. B, Condensed Matter and Materials Physics, 55(19), 12852–12855.