@article{bharathan_narayan_rozgonyi_bulman_2013, title={Poisson ratio of epitaxial germanium films grown on silicon}, volume={42}, DOI={10.1007/s11664-012-2337-6}, number={1}, journal={Journal of Electronic Materials}, author={Bharathan, J. and Narayan, Jagdish and Rozgonyi, G. and Bulman, G. E.}, year={2013}, pages={40–46} }
 @article{bulman_doverspike_sheppard_weeks_kong_dieringer_edmond_brown_swindell_schetzina_1997, title={Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC}, volume={33}, DOI={10.1049/el:19971025}, number={18}, journal={Electronics Letters}, author={Bulman, G. E. and Doverspike, K. and Sheppard, S. T. and Weeks, T. W. and Kong, H. S. and Dieringer, H. M. and Edmond, J. A. and Brown, J. D. and Swindell, J. T. and Schetzina, J. F.}, year={1997}, pages={1556–1557} }