William C. Hughes

Works (3)

Updated: July 5th, 2023 16:04

1997 article

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

Johnson, M. A. L., Hughes, W. C., Rowland, W. H., Cook, J. W., Schetzina, J. F., Leonard, M., … Zavada, J. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 72–78.

By: M. Johnson  n, W. Hughes n, W. Rowland n, J. Cook n, J. Schetzina n, M. Leonard* , H. Kong*, J. Edmond*, J. Zavada*

Contributors: M. Johnson  n, W. Hughes n, W. Rowland Jr., J. Cook Jr., J. Schetzina n, M. Leonard* , H. Kong*, J. Edmond*, J. Zavada*

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Sources: Web Of Science, ORCID
Added: August 6, 2018

1997 article

MBE growth and properties of GaN on GaN/SiC substrates

Johnson, M. A. L., Fujita, S., Rowland, W. H., Bowers, K. A., Hughes, W. C., He, Y. W., … Edmond, J. A. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 213–218.

By: M. Johnson  n, S. Fujita  n, W. Rowland n, K. Bowers n, W. Hughes n, Y. He  n, N. ElMasry n, J. Cook n ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

1997 article

Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters

Hughes, W. C., Boney, C., Johnson, M. A. L., Cook, J. W., & Schetzina, J. F. (1997, May). JOURNAL OF CRYSTAL GROWTH, Vol. 175, pp. 546–551.

By: W. Hughes n, C. Boney n, M. Johnson  n, J. Cook n & J. Schetzina n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor Quantum Structures and Devices; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

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