1997 journal article
Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
Journal of Crystal Growth, 175-176(PART 1), 72–78.
By: M. Johnson n, W. Hughes, W. Rowland n, J. Cook, J. Schetzina, M. Leonard , H. Kong*, J. Edmond*, J. Zavada *
MBE Growth and properties of GaN on GaN/SiC substrates
Solid-State Electronics, 41(2), 213–218.
By: M. Johnson n, S. Fujita n, W. Rowland n, K. Bowers n, W. Hughes, Y. He n, N. El-Masry, J. Cook ...and 3 other authors, including 1 NC State author, J. Schetzina, J. Ren * & J. Edmond*
Surface preparation of ZnSe substrates for MBE growth of II-VI light emitters
Journal of Crystal Growth, 175(1997 May), 546–551.
By: W. Hughes, C. Boney n, M. Johnson n, J. Cook & J. Schetzina