R. B. Hulfachor

Williams, S. C., Hulfachor, R. B., Kim, K. W., Littlejohn, M. A., & Holton, W. C. (1998). Scaling trends for device performance and reliability in channel-engineered n-MOSFETs. IEEE Transactions on Electron Devices, 45(1), 254–260. https://doi.org/10.1109/16.658839

Hulfachor, R. B., Kim, K. W., Littlejohn, M. A., & Osburn, C. M. (1997). Effects of silicon layer properties on device reliability for 0.1-μm SOI n-MOSFET design strategies. IEEE Transactions on Electron Devices, 44(5), 815–821. https://doi.org/10.1109/16.568044

Tian, H., Hulfachor, R. B., Ellis-Monaghan, J. J., Kim, K. W., Littlejohn, M. A., Hauser, J. R., & Masnari, N. A. (1994). An evaluation of super-steep-retrograde channel doping for deep-submicron MOSFET applications. IEEE Transactions on Electron Devices, 41(10), 1880–1882. https://doi.org/10.1109/16.324605