Oleg V. Kononchuk

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

APPLIED PHYSICS LETTERS, 74(9), 1263–1265.

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928.

Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

APPLIED PHYSICS LETTERS, 73(9), 1206–1208.

Impurity gettering to secondary defects created by MeV ion implantation in silicon

JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465.

Gettering of iron in silicon-on-insulator wafers

APPLIED PHYSICS LETTERS, 71(8), 1107–1109.

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881.