1999 journal article

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

APPLIED PHYSICS LETTERS, 74(9), 1263–1265.

By: C. Cho, N. Yarykin, R. Brown, O. Kononchuk, G. Rozgonyi & R. Zuhr

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928.

By: K. Beaman, O. Kononchuk, S. Koveshnikov, C. Osburn & G. Rozgonyi

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

By: R. Brown, O. Kononchuk & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

By: O. Kononchuk, I. Bondarenko & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

APPLIED PHYSICS LETTERS, 73(9), 1206–1208.

By: O. Kononchuk, K. Korablev, N. Yarykin & G. Rozgonyi

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Impurity gettering to secondary defects created by MeV ion implantation in silicon

JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465.

By: R. Brown, O. Kononchuk, G. Rozgonyi, S. Koveshnikov, A. Knights, P. Simpson, F. Gonzalez

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Gettering of iron in silicon-on-insulator wafers

APPLIED PHYSICS LETTERS, 71(8), 1107–1109.

By: K. Beaman, A. Agarwal, O. Kononchuk, S. Koveshnikov, I. Bondarenko & G. Rozgonyi

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881.

By: R. Brown, O. Kononchuk, I. Bondarenko, A. Romanowski, Z. Radzimski, G. Rozgonyi, F. Gonzalez

Source: Web Of Science
Added: August 6, 2018