Works (8)

Updated: July 5th, 2023 16:04

1999 journal article

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

APPLIED PHYSICS LETTERS, 74(9), 1263–1265.

By: C. Cho n, N. Yarykin n, R. Brown n, O. Kononchuk n, G. Rozgonyi n & R. Zuhr*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Lateral gettering of Fe on bulk and silicon-on-insulator wafers

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928.

By: K. Beaman n, O. Kononchuk n, S. Koveshnikov n, C. Osburn n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

By: R. Brown, O. Kononchuk & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

By: O. Kononchuk, I. Bondarenko & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

APPLIED PHYSICS LETTERS, 73(9), 1206–1208.

By: O. Kononchuk n, K. Korablev n, N. Yarykin n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Impurity gettering to secondary defects created by MeV ion implantation in silicon

JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465.

By: R. Brown n, O. Kononchuk n, G. Rozgonyi n, S. Koveshnikov, A. Knights*, P. Simpson*, F. Gonzalez*

co-author countries: Canada 🇨🇦 United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Gettering of iron in silicon-on-insulator wafers

APPLIED PHYSICS LETTERS, 71(8), 1107–1109.

By: K. Beaman n, A. Agarwal n, O. Kononchuk n, S. Koveshnikov n, I. Bondarenko n & G. Rozgonyi n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881.

By: R. Brown n, O. Kononchuk n, I. Bondarenko n, A. Romanowski n, Z. Radzimski n, G. Rozgonyi n, F. Gonzalez n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.