Oleg V. Kononchuk

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. (1999, March 1). Applied Physics Letters.

Lateral Gettering of Fe on Bulk and Silicon‐on‐Insulator Wafers

Beaman, K. L., Kononchuk, O., Koveshnikov, S., Osburn, C. M., & Rozgonyi, G. A. (1999, May 1). Journal of The Electrochemical Society.

Simulation of metallic impurity gettering in silicon by MeV ion implantation

Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

Kononchuk, O., Korablev, K. G., Yarykin, N., & Rozgonyi, G. A. (1998, August 31). Applied Physics Letters.

Impurity gettering to secondary defects created by MeV ion implantation in silicon

Brown, R. A., Kononchuk, O., Rozgonyi, G. A., Koveshnikov, S., Knights, A. P., Simpson, P. J., & González, F. (1998, September 1). Journal of Applied Physics.

Gettering of iron in silicon-on-insulator wafers

Beaman, K. L., Agarwal, A., Kononchuk, O., Koveshnikov, S., Bondarenko, I., & Rozgonyi, G. A. (1997, August 25). Applied Physics Letters.

Metallic Impurity Gettering and Secondary Defect Formation in Megaelectron Volt Self‐Implanted Czochralski and Float‐Zone Silicon

Brown, R. A., Kononchuk, O., Bondarenko, I., Romanowski, A., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997, August 1). Journal of The Electrochemical Society.