Works (5)

Updated: July 5th, 2023 16:04

1999 journal article

Crystal structure and defects in nitrogen-deficient GaN

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.43).

By: S. Oktyabrsky, K. Dovidenko, A. Sharma, V. Joshkin & J. Narayan

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Cubic GaN formation under nitrogen-deficient conditions

APPLIED PHYSICS LETTERS, 74(17), 2465–2467.

By: S. Oktyabrsky*, K. Dovidenko n, A. Sharma n, J. Narayan n & V. Joshkin*

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

1999 journal article

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

By: V. Joshkin n, C. Parker n, S. Bedair n, J. Muth n, I. Shmagin n, R. Kolbas n, E. Piner n, R. Molnar*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

By: V. Joshkin*, C. Parker n, S. Bedair n, L. Krasnobaev n, J. Cuomo n, R. Davis n, A. Suvkhanov*

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.

By: V. Joshkin n, J. Roberts n, F. McIntosh n, S. Bedair n, E. Piner n & M. Behbehani n

co-author countries: United States of America 🇺🇸
Source: Web Of Science
Added: August 6, 2018

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