Vladimir A. Joshkin

Crystal structure and defects in nitrogen-deficient GaN

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.43).

Cubic GaN formation under nitrogen-deficient conditions

APPLIED PHYSICS LETTERS, 74(17), 2465–2467.

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 86(1), 281–288.

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

Optical memory effect in GaN epitaxial films

APPLIED PHYSICS LETTERS, 71(2), 234–236.