Crystal structure and defects in nitrogen-deficient GaN - Oktyabrsky, S.; Dovidenko, K.; Sharma, A. K.; Joshkin, V.; Narayan, J. (MRS Internet Journal of Nitride Semiconductor Research, 1999)

Cubic GaN formation under nitrogen-deficient conditions - Oktyabrsky, S; Dovidenko, K; Sharma, AK; Narayan, J; Joshkin, V (APPLIED PHYSICS LETTERS, 1999)

Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy - Joshkin, VA; Parker, CA; Bedair, SM; Muth, JF; Shmagin, IK; Kolbas, RM; Piner, EL; Molnar, RJ (JOURNAL OF APPLIED PHYSICS, 1999)

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC - Joshkin, VA; Parker, CA; Bedair, SM; Krasnobaev, LY; Cuomo, JJ; Davis, RF; Suvkhanov, A (APPLIED PHYSICS LETTERS, 1998)

Optical memory effect in GaN epitaxial films - Joshkin, VA; Roberts, JC; McIntosh, FG; Bedair, SM; Piner, EL; Behbehani, MK (APPLIED PHYSICS LETTERS, 1997)