Vladimir A. Joshkin

Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Joshkin, V., & Narayan, J. (1999). Crystal structure and defects in nitrogen-deficient GaN. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G6.43).

Oktyabrsky, S., Dovidenko, K., Sharma, A. K., Narayan, J., & Joshkin, V. (1999). Cubic GaN formation under nitrogen-deficient conditions. APPLIED PHYSICS LETTERS, 74(17), 2465–2467. https://doi.org/10.1063/1.123882

Joshkin, V. A., Parker, C. A., Bedair, S. M., Muth, J. F., Shmagin, I. K., Kolbas, R. M., … Molnar, R. J. (1999). Effect of growth temperature on point defect density of unintentionally doped GaN grown by metalorganic chemical vapor deposition and hydride vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 86(1), 281–288. https://doi.org/10.1063/1.370727

Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998). Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC. APPLIED PHYSICS LETTERS, 72(22), 2838–2840. https://doi.org/10.1063/1.121474

Joshkin, V. A., Roberts, J. C., McIntosh, F. G., Bedair, S. M., Piner, E. L., & Behbehani, M. K. (1997). Optical memory effect in GaN epitaxial films. APPLIED PHYSICS LETTERS, 71(2), 234–236. https://doi.org/10.1063/1.120414