Madhavan Ramamoorthy

Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999). Chemical and strain effects on Boron-doped Si(100). PHYSICAL REVIEW B, 59(7), 4813–4821. https://doi.org/10.1103/physrevb.59.4813

Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1999). Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface. PHYSICAL REVIEW B, 60(11), 8178–8184. https://doi.org/10.1103/physrevb.60.8178

Ramamoorthy, M., Briggs, E. L., & Bernholc, J. (1998). Chemical trends in impurity incorporation into Si(100). PHYSICAL REVIEW LETTERS, 81(8), 1642–1645. https://doi.org/10.1103/PhysRevLett.81.1642

Ramamoorthy, M., & Pantelides, S. T. (1998). Enhanced modes of oxygen diffusion in silicon. SOLID STATE COMMUNICATIONS, 106(5), 243–248. https://doi.org/10.1016/S0038-1098(98)00075-1