Raoul Schlesser

Growth of AlN single crystalline boules

Herro, Z. G., Zhuang, D., Schlesser, R., & Sitar, Z. (2010, September 1). JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 2519–2521.

Seeded growth process for preparing aluminum nitride single crystals

Dense, shaped articles constructed of a refractory material and methods of preparing such articles

Seeded growth of AlN on SiC substrates and defect characterization

JOURNAL OF CRYSTAL GROWTH, 310(10), 2464–2470.

Effect of thermal environment evolution on A1N bulk sublimation crystal growth

JOURNAL OF CRYSTAL GROWTH, 306(1), 39–46.

Electronic high temperature characteristics of AlN

Electronics Letters, 43(10), 592–594.

Characterization of bulk grown GaN and AlN single crystal materials

Raghothamachar, B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D. J., Herro, Z., … Spencer, M. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 349–353.

Current-voltage characteristics of n/n lateral polarity junctions in GaN

APPLIED PHYSICS LETTERS, 89(5).

Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport

JOURNAL OF ELECTRONIC MATERIALS, 35(7), 1513–1517.

Seeded growth of AlN single crystals by physical vapor transport

Zhuang, D., Herro, Z. G., Schlesser, R., & Sitar, Z. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 372–375.

AlN bulk crystals grown on SiC seeds

Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005, July 15). JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 68–74.

Crucible materials for growth of aluminum nitride crystals

Schlesser, R., Dalmau, R., Zhuang, D., Collazo, R., & Sitar, Z. (2005, July 15). JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 75–80.

Design of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer modeling

CRYSTAL GROWTH & DESIGN, 5(4), 1491–1498.

Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers

Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2006, January 25). JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 586–590.

Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport

Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport. JOURNAL OF CRYSTAL GROWTH, 286(2), 205–208.

Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules

Journal of Crystal Growth, 279(1-2), 13–19.

Band-edge exciton states in AlN single crystals and epitaxial layers

APPLIED PHYSICS LETTERS, 85(19), 4334–4336.

Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere

MRS Internet Journal of Nitride Semiconductor Research, 9(2).

Mass transfer in A1N crystal growth at high temperatures

JOURNAL OF CRYSTAL GROWTH, 264(1-3), 369–378.

Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport

SURFACE SCIENCE, 560(1-3), L202–L206.

Nanoscale GaN whiskers fabricated by photoelectrochemical etching

JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188.

Selective etching of GaN from AlGaN/GaN and AlN/GaN structures

MRS Internet Journal of Nitride Semiconductor Research, 9(5).

The growth and optical properties of large, high-quality AlN single crystals

JOURNAL OF APPLIED PHYSICS, 96(10), 5870–5876.

Electron energy distribution during high-field transport in AlN

JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771.

Growth kinetics and thermal stress in AlN bulk crystal growth

JOURNAL OF CRYSTAL GROWTH, 253(1-4), 326–339.

Mechanisms limiting electron field emission from diamond

New Diamond and Frontier Carbon Technology, 13(5), 285–295.

Experimental observation of electron velocity overshoot in AlN

APPLIED PHYSICS LETTERS, 81(27), 5189–5191.

Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio

JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537.

Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere

JOURNAL OF CRYSTAL GROWTH, 234(2-3), 349–353.

High temperature nucleation and growth of GaN crystals from the vapor phase

JOURNAL OF CRYSTAL GROWTH, 241(4), 404–415.

Role of adsorbates in field emission from nanotubes

DIAMOND AND RELATED MATERIALS, Vol. 11, pp. 769–773.

Seeded growth of AlN bulk single crystals by sublimation

JOURNAL OF CRYSTAL GROWTH, 241(4), 416–420.

Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN

Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., … Kolis, J. W. (2002, December). JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 271–280.

Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality

DIAMOND AND RELATED MATERIALS, 10(11), 2092–2095.

Process optimization in the low-pressure flat flame growth of diamond

DIAMOND AND RELATED MATERIALS, Vol. 10, pp. 289–294.

Two field-emission states of single-walled carbon nanotubes

APPLIED PHYSICS LETTERS, 78(14), 2058–2060.

Energy distribution of field emitted electrons from carbon nanotubes

DIAMOND AND RELATED MATERIALS, Vol. 9, pp. 1201–1204.

Hot electron transport in AlN

JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869.

Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 734–739.

Coalesced oriented diamond films on nickel

JOURNAL OF MATERIALS RESEARCH, 13(5), 1120–1123.

Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy

JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242.

Electron emission mechanism from cubic boron nitride-coated molybdenum emitters

APPLIED PHYSICS LETTERS, 72(22), 2909–2911.

Electron energy distribution of diamond-coated field emitters

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(2), 716–719.

Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior

JOURNAL OF APPLIED PHYSICS, 84(6), 3382–3385.

Field emission energy distribution analysis of wide-band-gap field emitters

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(2), 689–692.

Heteroepitaxial nucleation of diamond on nickel

Sitar, Z., Liu, W., Yang, P. C., Wolden, C. A., Schlesser, R., & Prater, J. T. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 276–282.

Mechanisms of field emission from diamond coated Mo emitters

Schlesser, R., McClure, M. T., McCarson, B. L., & Sitar, Z. (1998, February). DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 636–639.

Structural and electronic properties of boron nitride thin films containing silicon

JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051.

Surface melting in the heteroepitaxial nucleation of diamond on Ni

JOURNAL OF CRYSTAL GROWTH, 187(1), 81–88.

Electrical characterization of diamond and graphite coated Mo field emitters

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(6), 2067–2071.

Field emission from carbon nanotubes

Collazo, R., Schlesser, R., & Sitar, Z. New Diamond and Frontier Carbon Technology, 13(5), 297–306.