Raoul Schlesser

Herro, Z. G., Zhuang, D., Schlesser, R., & Sitar, Z. (2010, September 1). Growth of AlN single crystalline boules. JOURNAL OF CRYSTAL GROWTH, Vol. 312, pp. 2519–2521. https://doi.org/10.1016/j.jcrysgro.2010.04.005

Schlesser, R., Noveski, V., & Sitar, Z. (2010). Seeded growth process for preparing aluminum nitride single crystals.

Schlesser, R., Dalmau, R. F., Noveski, V., & Sitar, Z. (2009). Dense, shaped articles constructed of a refractory material and methods of preparing such articles.

Lu, P., Edgar, J. H., Cao, C., Hohn, K., Dalmau, R., Schlesser, R., & Sitar, Z. (2008). Seeded growth of AlN on SiC substrates and defect characterization. JOURNAL OF CRYSTAL GROWTH, 310(10), 2464–2470. https://doi.org/10.1016/j.jcrysgro.2008.01.010

Cai, D., Zheng, L. L., Zhang, H., Zhuang, D., Herro, Z. G., Schlesser, R., & Sitar, Z. (2007). Effect of thermal environment evolution on A1N bulk sublimation crystal growth. JOURNAL OF CRYSTAL GROWTH, 306(1), 39–46. https://doi.org/10.1016/j.jcrysgro.2007.04.037

Neuburger, M., Aleksov, A., Schlesser, R., Kohn, E., & Sitar, Z. (2007). Electronic high temperature characteristics of AlN. Electronics Letters, 43(10), 592–594. https://doi.org/10.1049/el:20070275

Raghothamachar, B., Bai, J., Dudley, M., Dalmau, R., Zhuang, D. J., Herro, Z., … Spencer, M. (2006, January 25). Characterization of bulk grown GaN and AlN single crystal materials. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 349–353. https://doi.org/10.1016/j.jcrysgro.2005.11.042

Aleksov, A., Collazo, R., Mita, S., Schlesser, R., & Sitar, Z. (2006). Current-voltage characteristics of n/n lateral polarity junctions in GaN. APPLIED PHYSICS LETTERS, 89(5). https://doi.org/10.1063/1.2244046

Collazo, R., Mita, S., Aleksov, A., Schlesser, R., & Sitar, Z. (2006, January 25). Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 586–590. https://doi.org/10.1016/j.jcrysgro.2005.10.080

Zhuang, D., Herro, Z. G., Schlesser, R., Raghothamachar, B., Dudley, M., & Sitar, Z. (2006). Seeded growth of AlN crystals on nonpolar seeds via physical vapor transport. JOURNAL OF ELECTRONIC MATERIALS, 35(7), 1513–1517. https://doi.org/10.1007/s11664-006-0141-x

Herro, Z. G., Zhuang, D., Schlesser, R., Collazo, R., & Sitar, Z. (2006). Seeded growth of AlN on N- and Al-polar < 0 0 0 1 > AlN seeds by physical vapor transport. JOURNAL OF CRYSTAL GROWTH, 286(2), 205–208. https://doi.org/10.1016/j.jcrysgro.2005.10.074

Zhuang, D., Herro, Z. G., Schlesser, R., & Sitar, Z. (2006, January 25). Seeded growth of AlN single crystals by physical vapor transport. JOURNAL OF CRYSTAL GROWTH, Vol. 287, pp. 372–375. https://doi.org/10.1016/j.jcrysgro.2005.11.047

Dalmau, R., Schlesser, R., Rodriguez, B. J., Nemanich, R. J., & Sitar, Z. (2005, July 15). AlN bulk crystals grown on SiC seeds. JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 68–74. https://doi.org/10.1016/j.jcrysgro.2005.03.012

Schlesser, R., Dalmau, R., Zhuang, D., Collazo, R., & Sitar, Z. (2005, July 15). Crucible materials for growth of aluminum nitride crystals. JOURNAL OF CRYSTAL GROWTH, Vol. 281, pp. 75–80. https://doi.org/10.1016/j.jcrysgro.2005.03.014

Wu, B., Noveski, V., Zhang, H., Schlesser, R., Mahajan, S., Beaudoin, S., & Sitar, Z. (2005). Design of an RF-heated bulk AlN growth reactor: Induction heating and heat transfer modeling. CRYSTAL GROWTH & DESIGN, 5(4), 1491–1498. https://doi.org/10.1021/cg050014m

Noveski, V., Schlesser, R., Raghothamachar, B., Dudley, M., Mahajan, S., Beaudoin, S., & Sitar, Z. (2005). Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules. Journal of Crystal Growth, 279(1-2), 13–19. https://doi.org/10.1016/j.jcrysgro.2004.12.027

Chen, L., Skromme, B. J., Dalmau, R. F., Schlesser, R., Sitar, Z., Chen, C., … Jiang, H. X. (2004). Band-edge exciton states in AlN single crystals and epitaxial layers. APPLIED PHYSICS LETTERS, 85(19), 4334–4336. https://doi.org/10.1063/1.1818733

Noveski, V., Schlesser, R., Mahajan, S., Beaudoin, S., & Sitar, Z. (2004). Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere. MRS Internet Journal of Nitride Semiconductor Research, 9(2). https://doi.org/10.1557/s1092578300000375

Noveski, V., Schlesser, R., Mahajan, S., Beaudoin, S., & Sitar, Z. (2004). Mass transfer in A1N crystal growth at high temperatures. JOURNAL OF CRYSTAL GROWTH, 264(1-3), 369–378. https://doi.org/10.1016/j.jcrysgro.2004.01.028

Brenner, D. W., Schlesser, R., Sitar, Z., Dalmau, R., Collazo, R., & Li, Y. (2004). Model for the influence of boron impurities on the morphology of AIN grown by physical vapor transport. SURFACE SCIENCE, 560(1-3), L202–L206. https://doi.org/10.1016/j.susc.2004.05.003

Grenko, J. A., Reynolds, C. L., Schlesser, R., Hren, J. J., Bachmann, K., Sitar, Z., & Kotula, P. G. (2004). Nanoscale GaN whiskers fabricated by photoelectrochemical etching. JOURNAL OF APPLIED PHYSICS, 96(9), 5185–5188. https://doi.org/10.1063/1.1788841

Grenko, J. A., Reynolds, C. L., Schlesser, R., Bachmann, K., Rietmeier, Z., Davis, R. F., & Sitar, Z. (2004). Selective etching of GaN from AlGaN/GaN and AlN/GaN structures. MRS Internet Journal of Nitride Semiconductor Research, 9(5). https://doi.org/10.1557/s1092578300000405

Strassburg, M., Senawiratne, J., Dietz, N., Haboeck, U., Hoffmann, A., Noveski, V., … Sitar, Z. (2004). The growth and optical properties of large, high-quality AlN single crystals. JOURNAL OF APPLIED PHYSICS, 96(10), 5870–5876. https://doi.org/10.1063/1.1801159

Collazo, R., Schlesser, R., Roskowski, A., Miraglia, P., Davis, R. F., & Sitar, Z. (2003). Electron energy distribution during high-field transport in AlN. JOURNAL OF APPLIED PHYSICS, 93(5), 2765–2771. https://doi.org/10.1063/1.1543633

Wu, B., Ma, R. H., Zhang, H., Dudley, M., Schlesser, R., & Sitar, Z. (2003). Growth kinetics and thermal stress in AlN bulk crystal growth. JOURNAL OF CRYSTAL GROWTH, 253(1-4), 326–339. https://doi.org/10.1016/S0022-0248(03)01044-3

Schlesser, R., McClure, M. T., & Sitar, Z. (2003). Mechanisms limiting electron field emission from diamond. New Diamond and Frontier Carbon Technology, 13(5), 285–295.

Collazo, R., Schlesser, R., & Sitar, Z. (2002). Experimental observation of electron velocity overshoot in AlN. APPLIED PHYSICS LETTERS, 81(27), 5189–5191. https://doi.org/10.1063/1.1534407

Shin, H., Arkun, E., Thomson, D. B., Miraglia, P., Preble, E., Schlesser, R., … Davis, R. F. (2002). Growth and decomposition of bulk GaN: role of the ammonia/nitrogen ratio. JOURNAL OF CRYSTAL GROWTH, 236(4), 529–537. https://doi.org/10.1016/S0022-0248(02)00825-4

Schlesser, R., & Sitar, Z. (2002). Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere. JOURNAL OF CRYSTAL GROWTH, 234(2-3), 349–353. https://doi.org/10.1016/S0022-0248(01)01720-1

Shin, H., Thomson, D. B., Schlesser, R., Davis, R. F., & Sitar, Z. (2002). High temperature nucleation and growth of GaN crystals from the vapor phase. JOURNAL OF CRYSTAL GROWTH, 241(4), 404–415. https://doi.org/10.1016/S0022-0248(02)01290-3

Collazo, R., Schlesser, R., & Sitar, Z. (2002). Role of adsorbates in field emission from nanotubes. DIAMOND AND RELATED MATERIALS, Vol. 11, pp. 769–773. https://doi.org/10.1016/S0925-9635(01)00585-4

Schlesser, R., Dalmau, R., & Sitar, Z. (2002). Seeded growth of AlN bulk single crystals by sublimation. JOURNAL OF CRYSTAL GROWTH, 241(4), 416–420. https://doi.org/10.1016/S0022-0248(02)01319-2

Raghothamachar, B., Vetter, W. M., Dudley, M., Dalmau, R., Schlesser, R., Sitar, Z., … Kolis, J. W. (2002, December). Synchrotron white beam topography characterization of physical vapor transport grown AlN and ammonothermal GaN. JOURNAL OF CRYSTAL GROWTH, Vol. 246, pp. 271–280. https://doi.org/10.1016/S0022-0248(02)01751-7

Wolter, S. D., Schlesser, R., Okuzumi, F., Prater, J. T., & Sitar, Z. (2001). Angle-dependent reflectometry as a technique for fast assessment of highly oriented diamond film quality. DIAMOND AND RELATED MATERIALS, 10(11), 2092–2095. https://doi.org/10.1016/S0925-9635(01)00487-3

Wolter, S. D., Schlesser, R., Okuzumi, F., Prater, J. T., & Sitar, Z. (2001). Process optimization in the low-pressure flat flame growth of diamond. DIAMOND AND RELATED MATERIALS, Vol. 10, pp. 289–294. https://doi.org/10.1016/S0925-9635(00)00477-5

Collazo, R., Schlesser, R., & Sitar, Z. (2001). Two field-emission states of single-walled carbon nanotubes. APPLIED PHYSICS LETTERS, 78(14), 2058–2060. https://doi.org/10.1063/1.1361089

Schlesser, R., Collazo, R., Bower, C., Zhou, O., & Sitar, Z. (2000). Energy distribution of field emitted electrons from carbon nanotubes. DIAMOND AND RELATED MATERIALS, Vol. 9, pp. 1201–1204. https://doi.org/10.1016/s0925-9635(99)00277-0

Collazo, R., Schlesser, R., Roskowski, A., Davis, R. F., & Sitar, Z. (2000). Hot electron transport in AlN. JOURNAL OF APPLIED PHYSICS, 88(10), 5865–5869. https://doi.org/10.1063/1.1318386

Park, M., Sowers, A. T., Rinne, C. L., Schlesser, R., Bergman, L., Nemanich, R. J., … Choi, W. B. (1999). Effect of nitrogen incorporation on electron emission from chemical vapor deposited diamond. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 17, pp. 734–739. https://doi.org/10.1116/1.590630

Yang, P. C., Wolden, C. A., Liu, W., Schlesser, R., Davis, R. F., Prater, J. T., & Sitar, Z. (1998). Coalesced oriented diamond films on nickel. JOURNAL OF MATERIALS RESEARCH, 13(5), 1120–1123. https://doi.org/10.1557/JMR.1998.0157

Ward, B. L., Nam, O. H., Hartman, J. D., English, S. L., McCarson, B. L., Schlesser, R., … Nemanich, R. J. (1998). Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy. JOURNAL OF APPLIED PHYSICS, 84(9), 5238–5242. https://doi.org/10.1063/1.368775

McCarson, B. L., Schlesser, R., McClure, M. T., & Sitar, Z. (1998). Electron emission mechanism from cubic boron nitride-coated molybdenum emitters. APPLIED PHYSICS LETTERS, 72(22), 2909–2911. https://doi.org/10.1063/1.121492

Choi, W. B., Schlesser, R., Wojak, G., Cuomo, J. J., Sitar, Z., & Hren, J. J. (1998). Electron energy distribution of diamond-coated field emitters. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(2), 716–719.

McCarson, B. L., Schlesser, R., & Sitar, Z. (1998). Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior. JOURNAL OF APPLIED PHYSICS, 84(6), 3382–3385. https://doi.org/10.1063/1.368496

Schlesser, R., McCarson, B. L., McClure, M. T., & Sitar, Z. (1998). Field emission energy distribution analysis of wide-band-gap field emitters. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(2), 689–692.

Sitar, Z., Liu, W., Yang, P. C., Wolden, C. A., Schlesser, R., & Prater, J. T. (1998, February). Heteroepitaxial nucleation of diamond on nickel. DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 276–282. https://doi.org/10.1016/S0925-9635(97)00244-6

Schlesser, R., McClure, M. T., McCarson, B. L., & Sitar, Z. (1998, February). Mechanisms of field emission from diamond coated Mo emitters. DIAMOND AND RELATED MATERIALS, Vol. 7, pp. 636–639. https://doi.org/10.1016/S0925-9635(97)00290-2

Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998). Structural and electronic properties of boron nitride thin films containing silicon. JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051. https://doi.org/10.1063/1.368752

Yang, P. C., Liu, W., Schlesser, R., Wolden, C. A., Davis, R. F., Prater, J. T., & Sitar, Z. (1998). Surface melting in the heteroepitaxial nucleation of diamond on Ni. JOURNAL OF CRYSTAL GROWTH, 187(1), 81–88. https://doi.org/10.1016/S0022-0248(97)00854-3

McClure, M. T., Schlesser, R., McCarson, B. L., & Sitar, Z. (1997). Electrical characterization of diamond and graphite coated Mo field emitters. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 15(6), 2067–2071.

Collazo, R., Schlesser, R., & Sitar, Z. Field emission from carbon nanotubes. New Diamond and Frontier Carbon Technology, 13(5), 297–306.