@article{kim_hanson_gruverman_kingon_streiffer_2006, title={Ferroelectric behavior in nominally relaxor lead lanthanum zirconate titanate thin films prepared by chemical solution deposition on copper foil}, volume={88}, number={26}, journal={Applied Physics Letters}, author={Kim, T. and Hanson, J. N. and Gruverman, A. and Kingon, A. I. and Streiffer, S. K.}, year={2006} }
 @misc{setter_damjanovic_eng_fox_gevorgian_hong_kingon_kohlstedt_park_stephenson_et al._2006, title={Ferroelectric thin films: Review of materials, properties, and applications}, volume={100}, number={5}, journal={Journal of Applied Physics}, author={Setter, N. and Damjanovic, D. and Eng, L. and Fox, G. and Gevorgian, S. and Hong, S. and Kingon, A. and Kohlstedt, H. and Park, N. Y. and Stephenson, G. B. and et al.}, year={2006}, pages={051606} }
 @misc{maria_kingon_dunn_streiffer_cheek_zhang_savic_2005, title={Multi-layer conductor-dielectric oxide structure}, volume={6,841,080}, number={2005 Jan. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Maria, J.-P. and Kingon, A. and Dunn, G. J. and Streiffer, S. and Cheek, K. and Zhang, M.-X. and Savic, J.}, year={2005} }
 @article{kim_maria_kingon_streiffer_2003, title={Evaluation of intrinsic and extrinsic contributions to the piezoelectric properties of Pb(Zr1-xTX)O-3 thin films as a function of composition}, volume={93}, ISSN={["0021-8979"]}, DOI={10.1063/1.1566478}, abstractNote={The piezoelectric, dielectric, and ferroelectric properties of highly (111)-textured, 200-nm-thick polycrystalline lead zirconate titanate (PZT) films have been investigated as a function of Zr/Ti ratio. The distinct peak in piezoelectric coefficient at the morphotropic phase boundary found in bulk PZT ceramics is not observed in thin film PZTs. Measurements of the temperature dependence of relative permittivity and the nonlinear behavior of relative permittivity and piezoelectric coefficient suggest that non-180° domain wall motion in these films is negligible, indicating that the extrinsic contribution to the room temperature permittivity is dominated by only 180° domain wall motion. The semiempirical phenomenological equation relating the piezoelectric coefficient to measured polarization and permittivity values is demonstrated to give an excellent description of the piezoelectric behavior in these films, assuming bulk electrostrictive and elastic coefficients. The small deviation between calculated an...}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Kim, DJ and Maria, JP and Kingon, AI and Streiffer, SK}, year={2003}, month={May}, pages={5568–5575} }
 @misc{maria_kingon_dunn_streiffer_k._m.-x._savic_2003, title={Multi-layer conductor-dielectric oxide structure}, volume={6,541,137}, number={2003 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Maria, J.-P and Kingon, A. and Dunn, G. and Streiffer, S.Cheek and K., Zhang and M.-X. and Savic, J.}, year={2003} }
 @article{baumann_streiffer_bai_ghosh_auciello_thompson_stemmer_rao_eom_xu_et al._2001, title={Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD}, volume={35}, number={1-4}, journal={Integrated Ferroelectrics}, author={Baumann, P. K. and Streiffer, S. K. and Bai, G. R. and Ghosh, K. and Auciello, O. and Thompson, C. and Stemmer, S. and Rao, R. A. and Eom, C. B. and Xu, F. and et al.}, year={2001}, pages={1881–1888} }
 @article{maria_cheek_streiffer_kim_dunn_kingon_2001, title={Lead zirconate titanate thin films on base-metal foils: an approach for embedded high-permittivity passive components}, volume={84}, DOI={10.1111/j.1151-2916.2001.tb01029.x}, abstractNote={An approach for embedding high-permittivity dielectric thin films into glass epoxy laminate packages has been developed. Lead lanthanum zirconate titanate (Pb0.85La0.15(Zr0.52Ti0.48)0.96O3, PLZT) thin films were prepared using chemical solution deposition on nickel-coated copper foils that were 50 μm thick. Sputter-deposited nickel top electrodes completed the all-base-metal capacitor stack. After high-temperature nitrogen-gas crystallization anneals, the PLZT composition showed no signs of reduction, whereas the base-metal foils remained flexible. The capacitance density was 300–400 nF/cm2, and the loss tangent was 0.01–0.02 over a frequency range of 1–1000 kHz. These properties represent a potential improvement of 2–3 orders of magnitude over currently available embedded capacitor technologies for polymeric packages.}, number={10}, journal={Journal of the American Ceramic Society}, author={Maria, J.-P. and Cheek, K. and Streiffer, S. and Kim, S. H. and Dunn, G. and Kingon, A.}, year={2001}, pages={2436–2438} }
 @misc{kingon_maria_streiffer_2000, title={Alternative dielectrics to silicon dioxide for memory and logic devices}, volume={406}, ISSN={["1476-4687"]}, DOI={10.1038/35023243}, number={6799}, journal={NATURE}, author={Kingon, AI and Maria, JP and Streiffer, SK}, year={2000}, month={Aug}, pages={1032–1038} }
 @article{stemmer_streiffer_browning_basceri_kingon_2000, title={Grain boundaries in barium strontium titanate thin films: Structure, chemistry and influence on electronic properties}, volume={8}, ISSN={["0927-7056"]}, DOI={10.1023/A:1008794520909}, number={2-3}, journal={INTERFACE SCIENCE}, author={Stemmer, S and Streiffer, SK and Browning, ND and Basceri, C and Kingon, AI}, year={2000}, month={Aug}, pages={209–221} }
 @article{kim_kim_maria_kingon_streiffer_im_auciello_krauss_2000, title={Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties}, volume={76}, ISSN={["1077-3118"]}, DOI={10.1063/1.125799}, abstractNote={The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO2/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Kim, SH and Kim, DJ and Maria, JP and Kingon, AI and Streiffer, SK and Im, J and Auciello, O and Krauss, AR}, year={2000}, month={Jan}, pages={496–498} }
 @article{stemmer_streiffer_browning_kingon_1999, title={Accommodation of nonstoichiometry in (100) fiber-textured (BaxSr1-x)Ti1-yO3+z thin films grown by chemical vapor deposition}, volume={74}, ISSN={["1077-3118"]}, DOI={10.1063/1.123871}, abstractNote={We have investigated the microstructural accommodation of nonstoichiometry in (BaxSr1−x)Ti1+yO3+z thin films grown by chemical vapor deposition. Films with y=0.04 and y=0.15 were studied by high-spatial resolution electron energy-loss spectroscopy, revealing changes in chemistry and local atomic environment both at grain boundaries and within grains as a function of titanium content. We find that excess titanium in the samples with y=0.15 segregates to the grain boundaries in addition to being partially accommodated in the grain interior.}, number={17}, journal={APPLIED PHYSICS LETTERS}, author={Stemmer, S and Streiffer, SK and Browning, ND and Kingon, AI}, year={1999}, month={Apr}, pages={2432–2434} }
 @article{kim_kim_lee_park_kingon_nemanich_im_streiffer_1999, title={An optimized process for fabrication of SrBi2Ta2O9 thin films using a novel chemical solution deposition technique}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0594}, abstractNote={Ferroelectric SrBi_2Ta_2O_9 (SBT) thin films on Pt/ZrO_2/SiO_2/Si were successfully prepared by using an alkanolamine-modified chemical solution deposition method. It was observed that alkanolamine provided stability to the SBT solution by retarding the hydrolysis and condensation rates. The crystallinity and the microstructure of the SBT thin films improved with increasing annealing temperature and were strongly correlated with the ferroelectric properties of the SBT thin films. The films annealed at 800 °C exhibited low leakage current density, low voltage saturation, high remanent polarization, and good fatigue characteristics at least up to 10^10 switching cycles, indicating favorable behavior for memory applications.}, number={11}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kim, SH and Kim, DJ and Lee, KM and Park, M and Kingon, AI and Nemanich, RJ and Im, J and Streiffer, SK}, year={1999}, month={Nov}, pages={4395–4401} }
 @misc{kingon_streiffer_1999, title={Ferroelectric films and devices}, volume={4}, number={1}, journal={Current Opinion in Solid State and Materials Science}, author={Kingon, A. I. and Streiffer, S. K.}, year={1999}, pages={39–44} }
 @article{streiffer_basceri_parker_lash_kingon_1999, title={Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1-x)Ti1+yO3+z thin films grown by chemical vapor deposition}, volume={86}, ISSN={["1089-7550"]}, DOI={10.1063/1.371404}, abstractNote={We have investigated the dielectric response of a series of {100} fiber-textured (BaxSr1−x)Ti1+yO3+z samples deposited by liquid-source metalorganic chemical vapor deposition onto Pt/SiO2/Si, as a function of the two most commonly varied microstructural parameters: film thickness and Ti nonstoichiometry y. We find that the overall behavior of these samples is adequately described by mean-field, Landau–Ginzburg–Devonshire theory as for bulk ferroelectrics. However, we quantify the impact of three separable factors for these films that greatly alter the dielectric susceptibility as a function of temperature, compared to that found for bulk ceramic samples at the same Ba/Sr ratio of 70/30: (i) Ti nonstoichiometry; (ii) the apparent interface effect; and (iii) the plane equibiaxial stress state resulting from thermal expansion mismatch strains. When these factors are properly taken into consideration, we show that these fine grained thin films behave in a manner entirely consistent with expectations based on ...}, number={8}, journal={JOURNAL OF APPLIED PHYSICS}, author={Streiffer, SK and Basceri, C and Parker, CB and Lash, SE and Kingon, AI}, year={1999}, month={Oct}, pages={4565–4575} }
 @article{kim_kim_im_streiffer_auciello_maria_kingon_1999, title={Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films}, volume={26}, DOI={10.1080/10584589908215626}, abstractNote={Abstract The crystallinity and the microstructure of Sr0.8Bi2.3Ta2O9 (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO2/Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.}, number={1-4}, journal={Integrated Ferroelectrics}, author={Kim, S. H. and Kim, D. J. and Im, J. and Streiffer, S. K. and Auciello, O. and Maria, J. P. and Kingon, A. I.}, year={1999}, pages={955–970} }
 @article{kim_kim_hong_streiffer_kingon_1999, title={Imprint and fatigue properties of chemical solution derived Pb1-xLax(ZryTi1-y)(1-x/4)O-3 thin films}, volume={14}, ISSN={["2044-5326"]}, DOI={10.1557/JMR.1999.0187}, abstractNote={We have investigated the effect of oxygen vacancies on imprint and fatigue behavior of the PLZT thin films. It is found that the compensation of oxygen vacancies with various dopant concentrations and electrode structures is an important process parameter in determining the tendency to imprint and fatigue. In the case of PLZT thin films, the voltage shifts related to imprint are attributed to the trapping of electrons at ionic defect sites such as oxygen vacancies near the film/electrode interface, the magnitude of polarization, and concentration of defect-dipole complexes involving oxygen vacancies such as V′_Pb–V^••o. The strong dependence of fatigue rate on electrode material for PLZT thin films is due to the effect of the ferroelectric/electrode interaction on the pinning and/or unpinning rate involving the accumulation of oxygen vacancies near the film/electrode interface during fatigue cycling. By using RuO_2 as the top and/or bottom electrode instead of Pt, improved fatigue properties are obtained compared to Pt/PLZT/Pt capacitors. This is because a reduced accumulation of oxygen vacancies near the interface by the oxide electrode such as RuO_2 may reduce the electronic charge trapping and, consequently, lead to less domain wall pinning.}, number={4}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kim, SH and Kim, DJ and Hong, J and Streiffer, SK and Kingon, AI}, year={1999}, month={Apr}, pages={1371–1377} }
 @article{maiwa_maria_christman_kim_streiffer_kingon_1999, title={Measurement and calculation of PZT thin film longitudinal piezoelectric coefficients}, volume={24}, ISSN={["1058-4587"]}, DOI={10.1080/10584589908215586}, abstractNote={The ferroelectric and piezoelectric properties of 2000 {angstrom} thick chemical solution deposited Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT) thin films were investigated. Several Zr/Ti ratios were studied: 30/70, 50/50 and 65/35, which correspond to tetragonal, near-morphotropic, and rhombohedral symmetries. In all samples, a {l_brace}111{r_brace}-texture is predominant. Longitudinal piezoelectric coefficients and their dc field dependence were measured using the contact AFM method. The expected trend of a maximum piezoelectric coefficient at or near to the MPB was not observed. The composition dependence was small, with the maximum d{sub 33} occurring in the tetragonal material. To explain the results, crystallographic texture and film thickness effects are suggested. Using a modified phenomenological approach, derived electrostrictive coefficients, and experimental data, d{sub 33} values were calculated. Qualitative agreement was observed between the measured and calculated coefficients. Justifications of modifications to the calculations are discussed.}, number={1-4}, journal={INTEGRATED FERROELECTRICS}, author={Maiwa, H and Maria, JP and Christman, JA and Kim, SH and Streiffer, K and Kingon, AI}, year={1999}, pages={139–146} }
 @article{maiwa_christman_kim_kim_maria_chen_streiffer_kingon_1999, title={Measurement of piezoelectric displacements of Pb(Zr, Ti)O-3 thin films using a double-beam interferometer}, volume={38}, ISSN={["0021-4922"]}, DOI={10.1143/jjap.38.5402}, abstractNote={The double-beam interferometric method is applied to measure the field-induced displacement of Pb(Zr, Ti)O3 thin films. The dc electric field dependence of the longitudinal piezoelectric coefficient (d33) response of Pb(Zr, Ti)O3 thin films deposited by metal organic chemical vapor deposition (MOCVD) was measured. Experimental d33 values were compared with coefficients calculated using a phenomenological approach and bulk parameters. Qualitative agreement was obtained between measured and calculated coefficients.}, number={9B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS}, author={Maiwa, H and Christman, JA and Kim, SH and Kim, DJ and Maria, JP and Chen, B and Streiffer, SK and Kingon, AI}, year={1999}, month={Sep}, pages={5402–5405} }
 @article{kim_kim_streiffer_kingon_1999, title={Preparation and ferroelectric properties of mixed composition layered lead zirconate titanate thin films for nonvolatile memory applications}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0332}, abstractNote={Mixed composition layered lead zirconate titanate (PZT) films sZr/Ti ratio = 30/70 + 65/35d with stoichiometric lead containing PZT thin layer at the film/electrode interface were successfully fabricated by a modified chemical solution deposition method. These modified PZT thin films are highly (111) textured, and have square-shaped P-E hysteresis loops with large remanent polarization and low coercive field, as well as low saturation voltage. In addition, these films show good fatigue and imprint behavior with Pt electrodes; the retained polarization of the modified film was above 50% after fatigue testing to 10^9 cycles, and the thermally induced voltage shifts (ΔV) were 0.51 V after heating at 150 °C for 4410 s, two times lower than for films without a stoichiometric thin layer.}, number={6}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kim, SH and Kim, DJ and Streiffer, SK and Kingon, AI}, year={1999}, month={Jun}, pages={2476–2483} }
 @article{kim_hong_streiffer_kingon_1999, title={The effect of RuO2/Pt hybrid bottom electrode structure on the leakage and fatigue properties of chemical solution derived Pb(ZrxTi1-x)O-3 thin films}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0135}, abstractNote={We have investigated the effect of RuO_2 (10, 30, 50 nm)/Pt layered hybrid bottom electrode structure and film composition on the leakage and fatigue properties of chemical solution derived Pb(Zr_ x Ti_1− x )O_3 (PZT) thin films. It was observed that the use of high Ti content (Zr: Ti = 30: 70) films with control of excess PbO at the thin RuO_2 (10 nm)/Pt bottom electrode surface reduced leakage current and showed good fatigue properties with high remanent polarization compared to the use of high Zr films (Zr: Ti = 50: 50) or thicker RuO_2 (30, 50 nm)/Pt bottom electrodes. Typical P-E hysteresis behavior of PZT films was observed even at an applied voltage of 3 V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics of these modified PZT thin films (Zr: Ti = 30: 70) on RuO_2 (10 nm)/Pt, measured at 5 V, showed stable behavior, and less than 15% fatigue degradation was observed up to 10^10 cycles.}, number={3}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kim, SH and Hong, JG and Streiffer, SK and Kingon, AI}, year={1999}, month={Mar}, pages={1018–1025} }
 @article{bilodeau_carl_vanbuskirk_roeder_basceri_lash_parker_streiffer_kingon_1998, title={Dielectric properties and microstructure of thin BST films}, volume={32 pt.4}, number={suppl.}, journal={Journal of the Korean Physical Society}, author={Bilodeau, S. M. and Carl, R. and VanBuskirk, P. C. and Roeder, J. F. and Basceri, C. and Lash, S. E. and Parker, C. B. and Streiffer, S. K. and Kingon, A. I.}, year={1998}, pages={1591–1594} }
 @article{romanov_lefevre_speck_pompe_streiffer_foster_1998, title={Domain pattern formation in epitaxial rhombohedral ferroelectric films. II. Interfacial defects and energetics}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.366636}, abstractNote={The coherency defect technique is developed for the domain pattern energetics in rhombohedral (001) epitaxial ferroelectric films. The coherency defects that are necessary to maintain the epitaxy during the ferroelectric phase transition are considered to be the only sources of elastic strains and stresses (and, correspondingly energy) in the film/substrate system. The coherency defects include: (i) a uniform distribution of edge dislocations which are responsible for the in-plane tension or compression and have Burgers vectors parallel to the interface; and two kinds of mesoscale defects: (ii) Somigliana screw dislocations which are responsible for in-plane shear; and (iii) wedge disclinations which are responsible for the out of plane rotations in neighboring domains. Using this approach, analytical expressions were found for the elastic energy in the film/substrate system for both the {101}-ri/rj and the {100}-ri/rj domain patterns. These two configurations differ by the orientation of domain walls, co...}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Romanov, AE and Lefevre, MJ and Speck, JS and Pompe, W and Streiffer, SK and Foster, CM}, year={1998}, month={Mar}, pages={2754–2765} }
 @article{streiffer_parker_romanov_lefevre_zhao_speck_pompe_foster_bai_1998, title={Domain patterns in epitaxial rhombohedral ferroelectric films. I. Geometry and experiments}, volume={83}, ISSN={["0021-8979"]}, DOI={10.1063/1.366632}, abstractNote={Possible domain patterns are developed for (001) oriented (pseudocubic indexing) epitaxial rhombohedral perovskite ferroelectric (FR) films. We assume that the films are grown above their Curie temperature (TC) in a cubic paraelectric (PC) state. The rhombohedral distortion consists of a “stretch” along one of the four 〈111〉 crystallographic directions of the cubic perovskite unit cell. Domain pattern formation is concurrent with the PC→FR transformation on cooling from the growth temperature. The domain patterns form to minimize elastic energy in the film, at the energetic expense of both forming domain boundaries and developing local stresses in the substrate. Eight possible domains may form, half of which are related by inversion, thus leading to four mechanically distinct variants. The possible domain walls are determined by mechanical and charge compatibility and follow closely from the analysis of Fousek and Janovec [J. Appl. Phys. 40, 135 (1969)]. Domain patterns may develop with either {100} or {1...}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Streiffer, SK and Parker, CB and Romanov, AE and Lefevre, MJ and Zhao, L and Speck, JS and Pompe, W and Foster, CM and Bai, GR}, year={1998}, month={Mar}, pages={2742–2753} }
 @article{lee_woolcott_basceri_lee_streiffer_kingon_yang_1998, title={Electrical properties of (Ba, Sr)TiO3 thin films prepared by liquid delivery MOCVD}, volume={32 pt.4}, number={suppl.}, journal={Journal of the Korean Physical Society}, author={Lee, W. J. and Woolcott, R. R. and Basceri, C. and Lee, H. Y. and Streiffer, S. K. and Kingon, A. I. and Yang, D. Y.}, year={1998}, pages={1652–1656} }
 @article{lee_basceri_streiffer_kingon_yang_park_kim_1998, title={Ir and Ru bottom electrodes for (Ba, Sr) TiO3 thin films deposited by liquid delivery source chemical vapor deposition}, volume={323}, ISSN={["0040-6090"]}, DOI={10.1016/S0040-6090(97)01043-2}, abstractNote={The electrical properties and surface morphologies of (Ba, Sr)TiO3 thin films, with various bottom electrode structures, deposited by liquid delivery metal organic chemical vapor deposition were investigated. Ir and Ru films as a bottom electrode with varying deposition temperatures were prepared onto SiO2 and polySi substrate structures using ion beam sputtering technique. It is observed that electrical properties of BST films deposited by liquid delivery MOCVD was changed with the deposition temperatures of Ir and Ru as well as substrate structures. Furthermore, it is revealed that these variations in leakage current could be strongly related with the roughness of BST films.}, number={1-2}, journal={THIN SOLID FILMS}, author={Lee, WJ and Basceri, C and Streiffer, SK and Kingon, AI and Yang, DY and Park, Y and Kim, HG}, year={1998}, month={Jun}, pages={285–290} }
 @article{fujimura_thomas_streiffer_kingon_1998, title={Preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films}, volume={37}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.37.5185}, abstractNote={Systematic studies on the preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 (SBT) have been performed. At a substrate temperature of 600°C, the film on SiO2 was not crystallized. Above 650°C, very strong diffraction from a non-ferroelectric, (111)-oriented fluorite phase was obtained. Its crystallinity increased with increasing Bi content in the target. The fluorite phase was also observed in the film on Pt deposited below 600°C, which together with the pyrochlore phase resulted in the formation of an interfacial reaction product, Bi2Pt. Above 650°C, the films tend to grow as the perovskite SBT phase with a c-axis orientation which is not the polarization axis. In contrast, the formation of the fluorite and pyrochlore phases can be suppressed on Ir electrodes.}, number={9B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS}, author={Fujimura, N and Thomas, DT and Streiffer, SK and Kingon, AJ}, year={1998}, month={Sep}, pages={5185–5188} }
 @article{grossmann_hoffmann_gusowski_waser_streiffer_basceri_parker_lash_kingon_1998, title={Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals}, volume={22}, number={1-4}, journal={Integrated Ferroelectrics}, author={Grossmann, M. and Hoffmann, S. and Gusowski, S. and Waser, R. and Streiffer, S. K. and Basceri, C. and Parker, C. B. and Lash, S. E. and Kingon, A. I.}, year={1998}, pages={603–614} }
 @article{park_choi_streiffer_hren_cuomo_1998, title={Secondary electron emission patterning of diamond with hydrogen and oxygen plasmas}, volume={72}, ISSN={["0003-6951"]}, DOI={10.1063/1.121424}, abstractNote={Secondary electron emission patterning of single crystal diamond surfaces with hydrogen and oxygen plasma treatments was demonstrated. Hydrogen plasma treated regions were much brighter than the oxygen terminated regions. Results of atomic force microscopy confirmed that the observed contrast is not topographical. Several other possible negative electron affinity (or low positive electron affinity) materials such as chemical vapor deposited (CVD) diamond, aluminum nitride, and tetrahedrally bonded amorphous carbon (txa−C1−x) were also investigated. Faint image contrast (patterning) was also observed from polycrystalline CVD diamond and polycrystalline aluminum nitride films; however, no contrast at all was obtained from tetrahedrally bonded amorphous carbon (txa−C1−x) films.}, number={20}, journal={APPLIED PHYSICS LETTERS}, author={Park, M and Choi, WB and Streiffer, SK and Hren, JJ and Cuomo, JJ}, year={1998}, month={May}, pages={2580–2582} }
 @article{kim_kim_hong_streiffer_kingon_1998, title={Thermally induced imprint properties of chemical solution derived PLZT thin films}, volume={22}, number={1-4}, journal={Integrated Ferroelectrics}, author={Kim, S. H. and Kim, D. J. and Hong, J. G. and Streiffer, S. K. and Kingon, A. I.}, year={1998}, pages={653–662} }
 @article{dietz_schumacher_waser_streiffer_basceri_kingon_1997, title={Leakage currents in Ba0.7Sr0.3TiO3 thin films for ultrahigh-density dynamic random access memories}, volume={82}, ISSN={["0021-8979"]}, DOI={10.1063/1.366045}, abstractNote={(Ba,Sr)TiO3 (BST) thin films grown by chemical vapor deposition and with platinum (Pt) top and bottom electrodes have been characterized with respect to the leakage current as a function of temperature and applied voltage. The data can be interpreted via a thermionic emission model. The Schottky approximation accounts for superohmic behavior at higher fields, but the barrier lowering is stronger than expected from this theory. While the leakage mechanism is comparable to SrTiO3 thin films prepared by chemical solution deposition, the absolute values of the leakage current are significantly lower for the metalorganic chemical vapor deposition (MOCVD) prepared BST film. This is presumably due to a more homogeneous microstructure of the latter and may also be due to different electrode processing. The influence of the film thickness on the leakage in combination with additional findings is used to discuss the field distribution in the films under a dc voltage stress.}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Dietz, GW and Schumacher, M and Waser, R and Streiffer, SK and Basceri, C and Kingon, AI}, year={1997}, month={Sep}, pages={2359–2364} }
 @article{basceri_streiffer_kingon_waser_1997, title={The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition}, volume={82}, ISSN={["0021-8979"]}, DOI={10.1063/1.366062}, abstractNote={The temperature- and field-dependent permittivities of fiber-textured Ba0.7Sr0.3TiO3 thin films grown by liquid-source metalorganic chemical vapor deposition were investigated as a function of film thickness. These films display a nonlinear dielectric response under conditions representative of those encountered in dynamic random access memories or other integrated capacitor applications. This behavior has the exact form expected for a classical nonlinear, nonhysteretic dielectric, as described in terms of a power series expansion of the free energy in the polarization as in the Landau–Ginzburg–Devonshire approach. Curie–Weiss-like behavior is exhibited above the bulk Curie point (∼300 K), although the ferroelectric phase transition appears frustrated. Small-signal capacitance measurements of films with different thicknesses (24–160 nm) indicate that only the first term in the power series expansion varies significantly with film thickness or temperature. Possible origins for this thickness dependence are...}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Basceri, C and Streiffer, SK and Kingon, AI and Waser, R}, year={1997}, month={Sep}, pages={2497–2504} }