Zhonghai Yu

Works (6)

Updated: July 5th, 2023 16:03

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson  n, Z. Yu n, J. Brown n, F. Koeck n, N. El-Masry n, H. Kong*, J. Edmond*, J. Cook n, J. Schetzina n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Semiconductor Quantum Structures and Devices
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

By: J. Muth, J. Brown, M. Johnson, Z. Yu, R. Kolbas, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu n, M. Johnson  n, J. Brown n, N. El-Masry n, J. Muth n, J. Cook n, J. Schetzina n, K. Haberern*, H. Kong*, J. Edmond*

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; ZnO doping and properties
Source: NC State University Libraries
Added: August 6, 2018

1999 article

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

By: M. Johnson  n, Z. Yu n, J. Brown n, N. El-Masry n, J. Cook n & J. Schetzina n

author keywords: cathodoluminescence (CL); epitaxial lateral overgrowth (ELO); GaN; metalorganic vapor phase epitaxy (MOVPE)
topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Semiconductor Quantum Structures and Devices
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

By: J. Brown n, Z. Yu n, J. Matthews n, S. Harney n, J. Boney n, J. Schetzina n, J. Benson *, K. Dang* ...

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
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Source: NC State University Libraries
Added: August 6, 2018

1998 article

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

By: Z. Yu n, M. Johnson  n, J. Brown n, N. El-Masry n, J. Cook n & J. Schetzina n

author keywords: gallium nitride; MOVPE; epitaxial lateral overgrowth
topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

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