1999 journal article
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).
1999 journal article
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).
1999 journal article
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).
1999 article
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride
Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.
1999 journal article
Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes
MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.
1998 article
Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire
Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.
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