Works (6)

Updated: July 5th, 2023 16:03

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson n, Z. Yu n, J. Brown n, F. Koeck n, N. El-Masry n, H. Kong*, J. Edmond*, J. Cook n, J. Schetzina n

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

By: J. Muth, J. Brown, M. Johnson, Z. Yu, R. Kolbas, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Muth n, J. Cook n, J. Schetzina n, K. Haberern*, H. Kong*, J. Edmond*

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

author keywords: cathodoluminescence (CL); epitaxial lateral overgrowth (ELO); GaN; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

By: J. Brown n, Z. Yu n, J. Matthews n, S. Harney n, J. Boney n, J. Schetzina n, J. Benson*, K. Dang* ...

UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: NC State University Libraries
Added: August 6, 2018

1998 article

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

author keywords: gallium nitride; MOVPE; epitaxial lateral overgrowth
Source: Web Of Science
Added: August 6, 2018

Citation Index includes data from a number of different sources. If you have questions about the sources of data in the Citation Index or need a set of data which is free to re-distribute, please contact us.

Certain data included herein are derived from the Web of Science© and InCites© (2024) of Clarivate Analytics. All rights reserved. You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.