Zhonghai Yu

Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., … Schetzina, J. F. (1999). A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). https://doi.org/10.1557/s1092578300003100

Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. (1999). Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., … Edmond, J. S. (1999). Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). https://doi.org/10.1557/s1092578300002878

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride. JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300. https://doi.org/10.1007/s11664-999-0030-1

Brown, J. D., Yu, Z. H., Matthews, J., Harney, S., Boney, J., Schetzina, J. F., … Krishnankutty, S. (1999). Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes. MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10. https://doi.org/10.1557/s109257830000065x

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire. JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339. https://doi.org/10.1016/S0022-0248(98)00638-1