@article{grenko_reynolds_schlesser_bachmann_rietmeier_davis_sitar_2004, title={Selective etching of GaN from AlGaN/GaN and AlN/GaN structures}, volume={9}, DOI={10.1557/s1092578300000405}, abstractNote={Thick GaN layers as well as AlGaN/GaN and AlN/GaN heterostructures grown by metalorganic vapor phase epitaxy have been photoelectrochemically (PEC) etched in various dilute electrolytes, and bandgap-selective etching has been demonstrated in heterostructures. This result is a significant step forward in the fabrication of group III-nitride devices and one-dimensional photonic bandgap (PBG) structures in the deep UV. Based on initial results from thick GaN layers, a method was developed to achieve self-stopping selective etching of thin GaN layers in AlGaN/GaN and AlN/GaN heterostructures. Selective PEC etching requires the use of a suitable light source with photon energies larger than the bandgap of GaN, but smaller than that of AlGaN or AlN, thus enabling selective hole generation in the GaN layers to be etched. Additionally, it is imperative to use an electrolyte that supports PEC etching of GaN without chemically etching AlGaN or AlN.}, number={5}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Grenko, J. A. and Reynolds, C. L. and Schlesser, R. and Bachmann, K. and Rietmeier, Z. and Davis, R. F. and Sitar, Z.}, year={2004} }
 @article{bachmann_sukidi_hopfner_harris_dietz_tran_beeler_ito_banks_1998, title={Real-time monitoring of steady-state pulsed chemical beam epitaxy by p-polarized reflectance}, volume={183}, ISSN={["0022-0248"]}, DOI={10.1016/s0022-0248(97)00410-7}, abstractNote={The structure in the p-polarized reflectance (PR) intensity Rp4(t) - observed under conditions of pulsed chemical beam epitaxy (PCBE) - is modeled on the basis of the four-layer stack: ambient/surface reaction layer (SRL)/epilayer/substrate. Linearization of the PR intensity with regard to the phase factor associated with the SRL results in a good approximation that can be expressed as Rp4 = Rp3 + ΔRp.Rp3 is the reflectivity of the three-layer stack ambient-epilayer-substrate. ΔRp describes the properties of the SRL. An explicit relation is derived between ΔRp(t) and the time-dependent surface concentrations ch(t) (h = 1, 2, …, N) of the constituents of the SRL, which holds for conditions of submonolayer coverage of the surface by source vapor molecules. Under conditions of low temperature PCBE at high flux, the SRL is expected to exhibit nonideal behavior, mandating replacement of the surface concentrations by activities. Also, in this case, the thickness of the SRL must be represented in terms of partial molar volumina Vh. Since the relation between ΔRp(t) and the activities of reactants, intermediates and products of the chemical reactions driving heteroepitaxial growth is non-linear, the extraction of kinetic parameters from the measured time dependence of the PR signal generally requires numerical modeling.}, number={3}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Bachmann, KJ and Sukidi, N and Hopfner, C and Harris, C and Dietz, N and Tran, HT and Beeler, S and Ito, K and Banks, HT}, year={1998}, month={Jan}, pages={323–337} }