@misc{carlisle_auciello_birrell_2006, title={Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries}, volume={7,128,889}, number={2006 Oct. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Carlisle, J. A. and Auciello, O. and Birrell, J.}, year={2006} }
 @article{garguilo_koeck_nemanich_xiao_carlisle_auciello_2005, title={Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays}, volume={72}, ISSN={["2469-9969"]}, DOI={10.1103/physrevb.72.165404}, abstractNote={Thermionic field emission properties of nitrogen doped ultrananocrystalline diamond (UNCD) coated silicon tip arrays are examined using thermionic field emission electron microscopy (TFEEM). Nitrogen doping has been shown to enhance the emission properties of diamond by the introduction of a donor level $1.7\phantom{\rule{0.3em}{0ex}}\mathrm{eV}$ below the conduction band minimum. The field enhancing geometry of the films initiates accelerated electron emission at the tipped structures which may be beneficial to thermionic energy converter design where space charge effects can significantly limit attainable current densities. Two temperature regimes of electron emission are observed; $600--800\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$, where the emission is enabled because of the H passivation and $900--1100\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$, where the emission is attributed to tunneling from nitrogen related states through the barrier of a clean diamond surface.}, number={16}, journal={PHYSICAL REVIEW B}, author={Garguilo, JM and Koeck, FAM and Nemanich, RJ and Xiao, XC and Carlisle, JA and Auciello, O}, year={2005}, month={Oct} }
 @misc{gruen_krauss_auciello_carlisle_2004, title={N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom}, volume={6,793,849}, number={2004 Sep. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gruen, D. M. and Krauss, A. R. and Auciello, O. H. and Carlisle, J. A.}, year={2004} }
 @misc{gruen_busmann_meyer_auciello_krauss_krauss_2004, title={Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices}, volume={6,811,612}, number={2004 Nov. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gruen, D. M. and Busmann, H. G. and Meyer, E. M. and Auciello, O. and Krauss, A. R. and Krauss, J. R.}, year={2004} }
 @misc{krauss_gruen_pellin_auciello_2003, title={Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor}, volume={6,613,601}, number={2003 Sep. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Krauss, A. R. and Gruen, D. M. and Pellin, M. J. and Auciello, O.}, year={2003} }
 @misc{gruen_krauss_ding_auciello_2002, title={Field emission from bias-grown diamond thin films in a microwave plasma}, volume={6,447,851}, number={2002 Sep. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gruen, D. M. and Krauss, A. R. and Ding, M. Q. and Auciello, O.}, year={2002} }
 @misc{krauss_gruen_pellin_auciello_2002, title={Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor}, volume={6,422,077}, number={2002 Jul. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Krauss, A. R. and Gruen, D. M. and Pellin, M. J. and Auciello, O.}, year={2002} }
 @article{baumann_streiffer_bai_ghosh_auciello_thompson_stemmer_rao_eom_xu_et al._2001, title={Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD}, volume={35}, number={1-4}, journal={Integrated Ferroelectrics}, author={Baumann, P. K. and Streiffer, S. K. and Bai, G. R. and Ghosh, K. and Auciello, O. and Thompson, C. and Stemmer, S. and Rao, R. A. and Eom, C. B. and Xu, F. and et al.}, year={2001}, pages={1881–1888} }
 @article{kim_kim_maria_kingon_streiffer_im_auciello_krauss_2000, title={Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties}, volume={76}, ISSN={["1077-3118"]}, DOI={10.1063/1.125799}, abstractNote={The properties of SrBi2Ta2O9 (SBT) films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films grown on stable Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibit high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films synthesized on Pt/Ti/SiO2/Si. It is shown that severe diffusion of Ti from the Ti interlayer onto the surface of the Pt bottom electrode and the increased surface roughness of this electrode stack play key roles in degradation of SBT properties.}, number={4}, journal={APPLIED PHYSICS LETTERS}, author={Kim, SH and Kim, DJ and Maria, JP and Kingon, AI and Streiffer, SK and Im, J and Auciello, O and Krauss, AR}, year={2000}, month={Jan}, pages={496–498} }
 @misc{auciello_krauss_mcguire_gruen_1999, title={Enhanced field emission from microtip structures}, volume={5,886,459}, number={1999 Mar. 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Auciello, O. H. and Krauss, A. R. and McGuire, G. E. and Gruen, D. M.}, year={1999} }
 @article{kim_kim_im_streiffer_auciello_maria_kingon_1999, title={Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films}, volume={26}, DOI={10.1080/10584589908215626}, abstractNote={Abstract The crystallinity and the microstructure of Sr0.8Bi2.3Ta2O9 (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO2/Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.}, number={1-4}, journal={Integrated Ferroelectrics}, author={Kim, S. H. and Kim, D. J. and Im, J. and Streiffer, S. K. and Auciello, O. and Maria, J. P. and Kingon, A. I.}, year={1999}, pages={955–970} }
 @article{im_auciello_krauss_gruen_chang_kim_kingon_1999, title={Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors}, volume={74}, ISSN={["0003-6951"]}, DOI={10.1063/1.123474}, abstractNote={It is known that the forming gas (N2–H2 mixture) annealing process required for microcircuit fabrication results in an unacceptable electrical degradation of SrBi2Ta2O9 (SBT) ferroelectric capacitors due mainly to the interaction of H2 with the ferroelectric layer of the capacitor. We have found a strong relationship between changes in the surface composition of the ferroelectric layer and the electrical properties of SBT capacitors as a result of hydrogen annealing. Mass spectroscopy of recoiled ions (MSRI) analysis revealed a strong reduction in the Bi signal as a function of exposure to hydrogen at high temperatures (∼500 °C). The Bi signal reduction correlates with Bi depletion in the SBT surface region. Subsequent annealing in oxygen at temperatures in the range of 700–800 °C resulted in the recovery of the MSRI Bi signal, corresponding to the replenishment of Bi in the previously Bi-depleted surface region. X-ray diffraction (XRD) analysis (probing the whole SBT film thickness) showed little difference in the XRD spectra of the SBT films before and after hydrogen and oxygen-recovery annealing. The combined results of the MSRI and XRD analyses can be interpreted as an indication that the degradation of the electrical properties of the SBT capacitors, after hydrogen annealing, is mainly due to the degradation of the near surface region of the SBT layer.}, number={8}, journal={APPLIED PHYSICS LETTERS}, author={Im, J and Auciello, O and Krauss, AR and Gruen, DM and Chang, RPH and Kim, SH and Kingon, AI}, year={1999}, month={Feb}, pages={1162–1164} }
 @article{auciello_gruverman_tokumoto_prakash_aggarwal_ramesh_1998, title={Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films}, volume={23}, number={1}, journal={MRS Bulletin}, author={Auciello, O. and Gruverman, A. and Tokumoto, H. and Prakash, S. A. and Aggarwal, S. and Ramesh, R.}, year={1998}, pages={33–42} }
 @article{thomas_kingon_auciello_waser_schumacher_1997, title={Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories}, volume={14}, ISSN={["1058-4587"]}, DOI={10.1080/10584589708019976}, abstractNote={Abstract Pulsed laser ablation deposition (PLAD) was used to synthesize SrBi2Ta2O9 (SBT) layered ferroelectric thin films to integrate them into capacitors with top and bottom Pt electrodes produce by an ion beam sputter-deposition technique. SBT layers produced by laser ablation of stoichiometric and Bi-rich SBT targets exhibited marked different orientations. In addition, Pt/SBT/Pt capacitors fabricated with the distinctly oriented SBT layers exhibited substantial difference in the shape and parameters of polarization hysteresis loops, although they exhibited practically no polarization fatigue. The results presented in this paper indicate that the composition, microstructure and properties of SBT layers and SBT-based capacitors depend on the target composition and more studies are needed to understand these dependencies.}, number={1-4}, journal={INTEGRATED FERROELECTRICS}, author={Thomas, D and Kingon, AI and Auciello, O and Waser, R and Schumacher, M}, year={1997}, pages={51–57} }
 @misc{kingon_al-shareef_auciello_gifford_lichtenwalner_dat_1996, title={Hybrid metal/metal oxide electrodes for ferroelectric capacitors}, volume={5,555,486}, number={1996 Sep. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Kingon, A. I. and Al-Shareef, H. N. and Auciello, O. H. and Gifford, K. D. and Lichtenwalner, D. J. and Dat, R.}, year={1996} }
 @article{dat_lee_auciello_kingon_1995, title={Pulsed-laser ablation synthesis and characterization of layered pt/srbi2ta2o9/pt ferroelectric capacitors with practically no polarization fatigue}, volume={67}, number={4}, journal={Applied Physics Letters}, author={Dat, R. and Lee, J. K. and Auciello, O. and Kingon, A. I.}, year={1995}, pages={572–574} }
 @misc{auciello_mcguire_1995, title={Thin film ferroelectric flat panel display devices, and methods for operating and fabricating same}, volume={5,453,661}, number={1995 Sep. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Auciello, O. H. and McGuire, G. E.}, year={1995} }
 @misc{krauss_auciello_1990, title={Sputter deposition for multi-component thin films}, volume={4,923,585}, number={1990 May 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Krauss, A. R. and Auciello, O.}, year={1990} }