Nora V. Edwards

Lindquist, O. P. A., Jarrendahl, K., Peters, S., Zettler, J. T., Cobet, C., Esser, N., … Edwards, N. V. (2001). Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV. APPLIED PHYSICS LETTERS, 78(18), 2715–2717. https://doi.org/10.1063/1.1369617

Pozina, G., Edwards, N. V., Bergman, J. P., Monemar, B., Bremser, M. D., & Davis, R. F. (2001). Time-resolved photoluminescence in strained GaN layers. Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., & Davis, R. F. (2001). Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition. APPLIED PHYSICS LETTERS, 78(8), 1062–1064. https://doi.org/10.1063/1.1350421

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). Optical characterization of wide bandgap semiconductors. THIN SOLID FILMS, Vol. 364, pp. 98–106. https://doi.org/10.1016/S0040-6090(99)00903-7

Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Jarrendahl, K., Cobet, C., … Aspnes, D. E. (2000). Real-time assessment of overlayer removal on 4H-SiC surfaces: Techniques and relevance to contact formation. SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, Vol. 338-3, pp. 1033–1036. https://doi.org/10.4028/www.scientific.net/msf.338-342.1033

Edwards, N. V., Jarrendahl, K., Aspnes, D. E., Robbie, K., Powell, G. D., Cobet, C., … Madsen, L. D. (2000). Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry. SURFACE SCIENCE, 464(1), L703–L707. https://doi.org/10.1016/S0039-6028(00)00689-0

Buyanova, I. A., Wagner, M., Chen, W. M., Edwards, N. V., Monemar, B., Lindstrom, J. L., … Akasaki, I. (1999). Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride. Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999). Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78). https://doi.org/10.1557/s1092578300002830

Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February). Analysis of optical spectra by Fourier methods. THIN SOLID FILMS, Vol. 313, pp. 143–148. https://doi.org/10.1016/S0040-6090(97)00801-8

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films. THIN SOLID FILMS, Vol. 313, pp. 187–192. https://doi.org/10.1016/S0040-6090(97)00815-8

Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998). Trends in residual stress for GaN/AlN/6H-SiC heterostructures. APPLIED PHYSICS LETTERS, 73(19), 2808–2810. https://doi.org/10.1063/1.122597

Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March). Growth, doping and characterization of AlxGa1-xN thin film alloys on 6H-SiC(0001) substrates. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 196–201. https://doi.org/10.1016/S0925-9635(96)00626-7

Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1997). In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 835–840. https://doi.org/10.1557/proc-449-835

Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997). Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141. https://doi.org/10.1016/s0921-5107(97)00151-7

Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress and quantification of residual stress. APPLIED PHYSICS LETTERS, 70(15), 2001–2003. https://doi.org/10.1063/1.119089

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1997). Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 781–786. https://doi.org/10.1557/proc-449-781