Yun-Chorng Chang

Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 884–887.

Optical and structural studies of hydride vapor phase epitaxy grown GaN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705.

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

APPLIED PHYSICS LETTERS, 81(10), 1797–1799.

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

APPLIED PHYSICS LETTERS, 79(3), 281–283.

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

APPLIED PHYSICS LETTERS, 74(21), 3188–3190.