Works (6)

Updated: July 5th, 2023 16:02

2008 journal article

Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 884–887.

By: S. Choi*, D. Aspnes n, N. Stoute n, Y. Kim*, H. Kim*, Y. Chang*, C. Palmstrom*

co-author countries: Korea (Republic of) 🇰🇷
Sources: Web Of Science, ORCID
Added: August 6, 2018

2003 journal article

Optical and structural studies of hydride vapor phase epitaxy grown GaN

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705.

By: Y. Chang n, A. Cai n, J. Muth n, R. Kolbas n, M. Park n, J. Cuomo n, A. Hanser*, J. Bumgarner*

Source: Web Of Science
Added: August 6, 2018

2002 journal article

Electron-beam-induced optical memory effects in GaN

APPLIED PHYSICS LETTERS, 80(15), 2675–2677.

Source: Web Of Science
Added: August 6, 2018

2002 journal article

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

APPLIED PHYSICS LETTERS, 81(10), 1797–1799.

By: M. Park n, J. Maria n, J. Cuomo n, Y. Chang n, J. Muth n, R. Kolbas n, R. Nemanich n, E. Carlson*, J. Bumgarner*

Source: Web Of Science
Added: August 6, 2018

2001 journal article

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

APPLIED PHYSICS LETTERS, 79(3), 281–283.

By: Y. Chang n, A. Oberhofer n, J. Muth n, R. Kolbas n & R. Davis n

Source: Web Of Science
Added: August 6, 2018

1999 journal article

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

APPLIED PHYSICS LETTERS, 74(21), 3188–3190.

By: M. Bergmann*, U. Ozgur*, H. Casey*, J. Muth n, Y. Chang n, R. Kolbas n, R. Rao*, C. Eom*, M. Schurman*

Source: Web Of Science
Added: August 6, 2018

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