Yun-Chorng Chang

Works (6)

Updated: July 5th, 2023 16:02

2008 article

Dielectric properties of InAsP alloy thin films and evaluation of direct‐ and reciprocal‐space methods of determining critical‐point parameters

Choi, S. G., Aspnes, D. E., Stoute, N. A., Kim, Y. D., Kim, H. J., Chang, Y. C., & Palmstrøm, C. J. (2008, April 1). Physica Status Solidi (a), Vol. 205, pp. 884–887.

By: S. Choi*, D. Aspnes n , N. Stoute n, Y. Kim *, H. Kim*, Y. Chang*, C. Palmstrøm *

topics (OpenAlex): Semiconductor materials and interfaces; Chalcogenide Semiconductor Thin Films; Surface and Thin Film Phenomena
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UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

2003 article

Optical and structural studies of hydride vapor phase epitaxy grown GaN

Chang, Y. C., Cai, A. L., Muth, J. F., Kolbas, R. M., Park, M., Cuomo, J. J., … Bumgarner, J. (2003, April 22). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: Y. Chang n, A. Cai  n, J. Muth n, R. Kolbas n, M. Park n, J. Cuomo n, A. Hanser*, J. Bumgarner*

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2002 article

Electron-beam-induced optical memory effects in GaN

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002, April 15). Applied Physics Letters.

By: Y. Chang n, A. Cai n, M. Johnson n, J. Muth n, R. Kolbas n, Z. Reitmeier n, S. Einfeldt n, R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
Source: Web Of Science
Added: August 6, 2018

2002 article

X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy

Park, M., Maria, J.-P., Cuomo, J. J., Chang, Y. C., Muth, J. F., Kolbas, R. M., … Bumgarner, J. (2002, August 30). Applied Physics Letters.

By: M. Park n, J. Maria n, J. Cuomo n, Y. Chang n, J. Muth n, R. Kolbas n, R. Nemanich n, E. Carlson*, J. Bumgarner*

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

2001 article

Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN

Chang, Y. C., Oberhofer, A. E., Muth, J. F., Kolbas, R. M., & Davis, R. F. (2001, July 16). Applied Physics Letters.

By: Y. Chang n, A. Oberhofer n, J. Muth n, R. Kolbas n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; ZnO doping and properties; Semiconductor Quantum Structures and Devices
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1999 article

Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer

Bergmann, M. J., Özgür, Ü., Casey, H. C., Muth, J. F., Chang, Y. C., Kolbas, R. M., … Schurman, M. (1999, May 24). Applied Physics Letters.

By: M. Bergmann*, Ü. Özgür *, H. Casey*, J. Muth n, Y. Chang n, R. Kolbas n, R. Rao*, C. Eom *, M. Schurman*

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

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