Chanrae Cho

Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. (1999). Evolution of deep-level centers in p-type silicon following ion implantation at 85 K. APPLIED PHYSICS LETTERS, 74(9), 1263–1265. https://doi.org/10.1063/1.123519

Yarykin, N., Cho, C. R., Zuhr, R. A., & Rozgonyi, G. A. (1999). In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

Yarykin, N., Cho, C. R., Zuhr, R., & Rozgonyi, G. (1999). In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions. Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

Yarykin, N., Cho, C. R., Rozgonyi, G. A., & Zuhr, R. A. (1999). The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K. APPLIED PHYSICS LETTERS, 75(2), 241–243. https://doi.org/10.1063/1.124335