@misc{chowdhury_israel_allen_2008, title={Optimized ultraviolet reflecting multi-layer coating for energy efficient lamps}, volume={7,352,118}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chowdhury, A. I. and Israel, R. and Allen, G. R.}, year={2008} }
 @misc{bigion_israel_chowdhury_lieszkovsky_2005, title={IR-coated halogen lamp using reflective end coats}, volume={6,967,443}, number={2005 Nov. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Bigion, L. and Israel, R. and Chowdhury, A. I. and Lieszkovsky, L.}, year={2005} }
 @misc{zhou_golz_zhao_israel_chowdhury_2004, title={Reflector lamps}, volume={6,774,545}, number={2004 Aug. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zhou, Y. and Golz, T. M. and Zhao, T. and Israel, R. and Chowdhury, A.}, year={2004} }
 @misc{israel_gunter_chowdhury_2002, title={LPCVD coated reflector}, volume={6,462,465}, number={2002 Oct. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Israel, R. and Gunter, C. and Chowdhury, A.}, year={2002} }
 @article{klein_anderson_chowdhury_parsons_1999, title={Hydrogenated silicon nitride thin films deposited between 50 and 250 degrees C using nitrogen/silane mixtures with helium dilution}, volume={17}, ISSN={["0734-2101"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000078136300017&KeyUID=WOS:000078136300017}, DOI={10.1116/1.582104}, abstractNote={Silicon nitride thin films, deposited by plasma enhanced chemical vapor deposition at temperatures between 250 and 50 °C from SiH4, N2 and He, were characterized using transmission infrared spectroscopy, ellipsometry, wet etch rate, and current-voltage analysis. At 250 °C using SiH4/N2/He flow ratios of 1/150/75, films with refractive index=1.80 and H concentrations <20%, distributed equally in Si-H and N-H units were obtained. The concentration of hydrogen and its distribution in N-H and Si-H bonds are sensitive to process temperature, suggesting that thermally driven N incorporation reactions are important during growth. Inert gas dilution allows films to be formed at <100 °C, with bonded hydrogen configurations similar to films deposited at higher temperatures. Current versus voltage traces of as-deposited films show charge trapping, which can be reduced by extended low temperature anneals. These results show that chemical composition can be controlled in low temperature silicon nitride deposition. This processing approach may be useful for encapsulation or for barrier layer formation on low temperature organic electronic devices or flexible transparent plastic substrates.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Klein, TM and Anderson, TM and Chowdhury, AI and Parsons, GN}, year={1999}, pages={108–112} }
 @article{chowdhury_klein_anderson_parsons_1998, title={Silane consumption and conversion analysis in amorphous silicon and silicon nitride plasma deposition using in situ mass spectroscopy}, volume={16}, ISSN={["0734-2101"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000074150500084&KeyUID=WOS:000074150500084}, DOI={10.1116/1.581117}, abstractNote={In situ mass spectroscopy is used to sense plasma deposition of silicon and silicon nitride, to analyze gas phase reactant depletion, and the efficiency of silane conversion into the thin film. A double-differentially pumped quadrupole mass spectrometer was used to monitor the SiH4, Si2H6, and H2 effluent from 100% SiH4 and 2% SiH4/He silicon deposition, and SiH4/He/N2 silicon nitride deposition processes. No significant changes in gas phase nitrogen related species were observed during nitride deposition. However, the Si species show significant process dependence allowing reaction analysis. Disilane species were produced at low powers in the SiH4/He/N2 process, but no amino–silane species were observed. The silane consumption and silicon incorporation efficiency are shown to depend on gas dilution, residence time, and reactor geometry.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Chowdhury, AI and Klein, TM and Anderson, TM and Parsons, GN}, year={1998}, pages={1852–1856} }