Works (3)
Updated: July 5th, 2023 16:04
1999 journal article
A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Silicon Carbide Semiconductor Technologies
Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018
1999 journal article
In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4303–4308.
topics (OpenAlex): Semiconductor materials and devices; Silicon and Solar Cell Technologies; Silicon Nanostructures and Photoluminescence
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels
IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1544–1551.
topics (OpenAlex): Advancements in Semiconductor Devices and Circuit Design; Semiconductor materials and devices; Silicon and Solar Cell Technologies
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018