1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

Journal of the Electrochemical Society, 146(3), 1189–1196.

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

In situ phosphorus doping during silicon epitaxy in an ultra high vacuum rapid thermal chemical vapor deposition reactor

Journal of the Electrochemical Society, 146(11), 4303–4308.

By: I. Ban & M. Ozturk

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels

IEEE Transactions on Electron Devices, 44(9), 1544–1551.

By: I. Ban, M. Ozturk & E. Demirlioglu

Source: NC State University Libraries
Added: August 6, 2018