Ibrahim Ban

Works (3)

Updated: July 5th, 2023 16:04

1999 journal article

A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196.

By: I. Ban*, M. Ozturk*, V. Misra* , J. Wortman*, D. Venables n & D. Maher n

Sources: Web Of Science, NC State University Libraries
Added: August 6, 2018

1999 journal article

In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4303–4308.

By: I. Ban n & M. Ozturk n

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6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels

IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1544–1551.

By: I. Ban n, M. Ozturk n & E. Demirlioglu*

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Source: Web Of Science
Added: August 6, 2018

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