Ibrahim Ban

Ban, I., Ozturk, M. C., Misra, V., Wortman, J. J., Venables, D., & Maher, D. M. (1999). A low-thermal-budget in situ doped multilayer silicon epitaxy process for MOSFET channel engineering. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(3), 1189–1196. https://doi.org/10.1149/1.1391744

Ban, I., & Ozturk, M. C. (1999). In situ phosphorus doping during silicon epitaxy in an ultrahigh vacuum rapid thermal chemical vapor deposition reactor. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(11), 4303–4308. https://doi.org/10.1149/1.1392631

Ban, I., Ozturk, M. C., & Demirlioglu, E. K. (1997). Suppression of oxidation-enhanced boron diffusion in silicon by carbon implantation and characterization of MOSFET's with carbon-implanted channels. IEEE TRANSACTIONS ON ELECTRON DEVICES, 44(9), 1544–1551. https://doi.org/10.1109/16.622613